Open main menu
Home
Random
Recent changes
Special pages
Community portal
Preferences
About Wikipedia
Disclaimers
Incubator escapee wiki
Search
User menu
Talk
Dark mode
Contributions
Create account
Log in
Editing
Bipolar junction transistor
(section)
Warning:
You are not logged in. Your IP address will be publicly visible if you make any edits. If you
log in
or
create an account
, your edits will be attributed to your username, along with other benefits.
Anti-spam check. Do
not
fill this in!
{{Short description|Transistor that uses both electrons and holes as charge carriers}} {{Redirect-multi|2|BJT|Junction transistor}} {{Use American English|date=January 2025}} {{Use mdy dates|date=January 2025}} {{Infobox electronic component | name = Bipolar junction transistor | image = Transistorer (cropped).jpg | caption = Typical individual BJT packages. From left to right: [[SOT-23]], [[TO-92]], [[TO-126]], [[TO-3]] | type = Active | inventor = [[William Shockley]] | invention_Year = 1948 | pins = Base, collector, and emitter | symbol = [[File:NPN AND PNP BJT SYMBOLS.png|180px]] }} [[File:BipolarTransistor3Dmodel.png|thumb|upright|alt=box with 3 wires, one with big and silicon chip - others connect to chip with wires|3D model of a TO-92 package, commonly used for small bipolar transistors]] A '''bipolar junction transistor''' ('''BJT''') is a type of [[transistor]] that uses both [[electron]]s and [[electron hole]]s as [[charge carrier]]s. In contrast, a unipolar transistor, such as a [[field-effect transistor]] (FET), uses only one kind of charge carrier. A bipolar transistor allows a small [[Electric current|current]] injected at one of its [[Terminal (electronics)|terminals]] to control a much larger current between the remaining two terminals, making the device capable of [[Amplifier|amplification]] or [[Electronic switch|switching]]. BJTs use two [[p–n junction]]s between two [[semiconductor]] types, n-type and p-type, which are regions in a single [[crystal]] of material. The junctions can be made in several different ways, such as changing the [[Doping (semiconductor)|doping]] of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original [[point-contact transistor]]. Diffused transistors, along with other components, are elements of [[integrated circuit]]s for analog and digital functions. Hundreds of bipolar junction transistors can be made in one circuit at a very low cost. Bipolar transistor integrated circuits were the main active devices of a generation of [[Mainframe computer|mainframe]] and [[minicomputer]]s, but most computer systems now use complementary metal–oxide–semiconductor ([[CMOS]]) integrated circuits relying on the field-effect transistor (FET). Bipolar transistors are still used for amplification of signals, switching, and in [[mixed-signal integrated circuit]]s using [[BiCMOS]]. Specialized types are used for high voltage and high current switches, or for [[Radio frequency|radio-frequency]] (RF) amplifiers.
Edit summary
(Briefly describe your changes)
By publishing changes, you agree to the
Terms of Use
, and you irrevocably agree to release your contribution under the
CC BY-SA 4.0 License
and the
GFDL
. You agree that a hyperlink or URL is sufficient attribution under the Creative Commons license.
Cancel
Editing help
(opens in new window)