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Ellipsometry
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{{Short description|Optical technique for characterizing thin films}} {{More footnotes needed|date=December 2010}} [[File:Ellipsometer at LAAS.jpg|thumb|An Ellipsometer at [[Laboratory for Analysis and Architecture of Systems|LAAS-CNRS]] in Toulouse, France.]] '''Ellipsometry''' is an [[optical]] technique for investigating the [[dielectric]] properties (complex [[refractive index]] or [[dielectric function]]) of [[thin film]]s. Ellipsometry measures the change of [[Polarization (waves)|polarization]] upon reflection or transmission and compares it to a model. It can be used to characterize [[Materials science|composition]], [[Surface roughness|roughness]], thickness (depth), [[Crystalline|crystalline nature]], [[Doping (semiconductor)|doping concentration]], [[electrical conductivity]] and other material properties. It is very sensitive to the change in the optical response of incident radiation that interacts with the material being investigated. A spectroscopic ellipsometer can be found in most thin film analytical labs. Ellipsometry is also becoming more interesting to researchers in other disciplines such as biology and medicine. These areas pose new challenges to the technique, such as measurements on unstable liquid surfaces and microscopic imaging.
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