Editing Gallium arsenide (section)

{{Redirect|GaAs||Gaas (disambiguation){{!}}Gaas}}
{{Chembox
| Verifiedfields = changed
| Watchedfields = changed
| verifiedrevid = 476995185
| Name =
| ImageFile =
| ImageFile1 = Gallium-arsenide-unit-cell-3D-balls.png
| ImageFile_Ref = {{chemboximage|correct|??}}
| ImageSize = 244
| ImageFile2 = Gallium Arsenide (GaAs) 2" wafer.jpg
| ImageCaption2=GaAs wafer of (100) orientation
| ImageFile1_Ref = {{chemboximage|correct|??}}
| ImageSize1 = 244
| ImageName1 = Samples of gallium arsenide
| OtherNames =
| IUPACName =
| PIN = Gallium arsenide
| SystematicName =
| Section1 = {{Chembox Identifiers
| CASNo = 1303-00-0
| CASNo_Ref = {{cascite|correct|CAS}}
| UNII_Ref = {{fdacite|correct|FDA}}
| UNII = 27FC46GA44
| PubChem = 14770
| ChemSpiderID = 14087
| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}}
| EINECS = 215-114-8
| UNNumber = 1557
| MeSHName = gallium+arsenide
| RTECS = LW8800000
| SMILES = [Ga]#[As]
| SMILES1 = [Ga+3].[As-3]
| StdInChI = 1S/AsH3.Ga.3H/h1H3;;;;
| StdInChI_Ref = {{stdinchicite|changed|chemspider}}
| StdInChIKey = SHVQQKYXGUBHBI-UHFFFAOYSA-N
| StdInChIKey_Ref = {{stdinchicite|changed|chemspider}}
}}
| Section2 = {{Chembox Properties
| Formula = GaAs
| MolarMass = 144.645 g/mol<ref name=crc>Haynes, p. 4.64</ref>
| Appearance = Gray crystals<ref name=crc/>
| Odor = garlic-like when moistened
| Density = 5.3176 g/cm<sup>3</sup><ref name=crc/>
| Solubility = insoluble
| SolubleOther = soluble in [[hydrochloric acid|HCl]] <br> insoluble in [[ethanol]], [[methanol]], [[acetone]]
| MeltingPtC = 1238
| MeltingPt_ref =<ref name=crc/>
| BandGap = 1.424 eV (at 300 K)<ref name="Blakemore1982">Blakemore, J. S. "Semiconducting and other major properties of gallium arsenide", Journal of Applied Physics, (1982) vol 53 Nr 10 pages R123-R181</ref>
| ElectronMobility = 9000 cm<sup>2</sup>/(V·s) (at 300 K)<ref name=crc4>Haynes, p. 12.90</ref>
| ThermalConductivity = 0.56 W/(cm·K) (at 300 K)<ref name=crc2/>
| RefractIndex = 3.3<ref name=crc3/>
| MagSus = −16.2{{e|-6}} cgs<ref name=crc3>Haynes, p. 12.86</ref>
}}
| Section3 = {{Chembox Structure
| Structure_ref =<ref name=crc2>Haynes, p. 12.81</ref>
| MolShape = Linear
| CrystalStruct = [[Zincblende (crystal structure)|Zinc blende]]
| SpaceGroup = ''T''<sup>2</sup><sub>d</sub>-''F''-4''3m''
| LattConst_a = 565.315 pm
| Coordination = Tetrahedral
}}
| Section4 =
| Section5 =
| Section6 =
| Section7 = {{Chembox Hazards
| GHSPictograms = {{GHS health hazard}}
| GHSSignalWord = '''DANGER'''
| HPhrases = {{H-phrases|350|372|360F}}
| PPhrases = {{P-phrases|261|273|301+310|311|501}}
| ExternalSDS = [http://www.wafertech.co.uk/galliumarsenide.htm External MSDS]
| NFPA-F = 0
| NFPA-H = 3
| NFPA-R = 0
| NFPA-S =
}}
|Section8={{Chembox Related
| OtherAnions = [[Gallium nitride]]<br />[[Gallium phosphide]]<br />[[Gallium antimonide]]
| OtherCations =
 }}
}}

'''[[Gallium]] [[arsenide]]''' ('''GaAs''') is a [[III-V]] [[direct band gap]] [[semiconductor]] with a [[Zincblende (crystal structure)|zinc blende]] crystal structure.

Gallium arsenide is used in the manufacture of devices such as [[microwave]] frequency [[integrated circuit]]s, [[monolithic microwave integrated circuit]]s, [[infrared]] [[light-emitting diode]]s, [[laser diode]]s, [[solar cells]] and optical windows.<ref name="Moss">{{cite book |author1=Moss, S. J. |title=The Chemistry of the Semiconductor Industry |author2=Ledwith, A. |publisher=Springer |year=1987 |isbn=978-0-216-92005-7}}</ref>

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including [[indium gallium arsenide]], [[aluminum gallium arsenide]] and others.