Editing IMPATT diode (section)

An '''IMPATT diode''' (impact ionization avalanche transit-time diode) is a form of high-power [[semiconductor]] [[diode]] used in high-frequency [[microwave]] electronics devices. They have [[negative resistance]] and are used as [[electronic oscillator|oscillators]] and [[amplifier]]s at microwave frequencies. They operate at frequencies of about 3 and 100&nbsp;GHz, or higher. The main advantage is their high-power capability; single IMPATT diodes can produce continuous microwave outputs of up to 3 kilowatts, and pulsed outputs of much higher power. These diodes are used in a variety of applications from low-power [[radar]] systems to proximity alarms. A major drawback of IMPATT diodes is the high level of [[phase noise]] they generate. This results from the statistical nature of the [[Avalanche breakdown|avalanche process]].