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Indium phosphide
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{{redirect|InP|other uses|INP (disambiguation){{!}}INP}} {{chembox | verifiedrevid = 477313377 | ImageFile = InPcrystal.jpg | ImageFile2 = InP.png | ImageSize = | ImageName = | IUPACName = | OtherNames = Indium(III) phosphide |Section1={{Chembox Identifiers | ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}} | ChemSpiderID = 28914 | InChI = 1/In.P/rInP/c1-2 | SMILES1 = [In+3].[P-3] | SMILES2 = [In]#P | InChIKey = GPXJNWSHGFTCBW-HIYQQWJCAF | StdInChI_Ref = {{stdinchicite|correct|chemspider}} | StdInChI = 1S/In.P | StdInChIKey_Ref = {{stdinchicite|correct|chemspider}} | StdInChIKey = GPXJNWSHGFTCBW-UHFFFAOYSA-N | CASNo = 22398-80-7 | CASNo_Ref = {{cascite|correct|CAS}} | UNII_Ref = {{fdacite|correct|FDA}} | UNII = SD36LG60G1 | PubChem = 31170 }} |Section2={{Chembox Properties | Formula = InP | MolarMass = 145.792 g/mol | Appearance = black [[cubic crystal system|cubic]] crystals<ref name=crc/> | Density = 4.81 g/cm<sup>3</sup>, solid<ref name=crc/> | MeltingPtC = 1062 | MeltingPt_ref = <ref name=crc>[[#Haynes|Haynes]], p. 4.66</ref> | BoilingPtC = | SolubleOther = slightly soluble in [[acid]]s | BandGap = 1.344 eV (300 K; [[Direct and indirect band gaps|direct]]) | ElectronMobility = 5400 cm<sup>2</sup>/(V·s) (300 K) | ThermalConductivity = 0.68 W/(cm·K) (300 K) | RefractIndex = 3.1 (infrared); <br/> 3.55 (632.8 nm)<ref>{{Citation|doi=10.1007/BF00626698|title=The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry|year=1993|last1=Sheng Chao|first1=Tien|last2=Lee|first2=Chung Len|last3=Lei|first3=Tan Fu|journal=Journal of Materials Science Letters|volume=12|pages=721|postscript=.|issue=10|s2cid=137171633}}</ref> }} |Section3={{Chembox Structure | Coordination = Tetrahedral | CrystalStruct = [[Zincblende (crystal structure)|Zinc blende]] | LattConst_a = 5.8687 Å <ref>{{cite web|title=Basic Parameters of InP|url=http://www.ioffe.ru/SVA/NSM/Semicond/InP/basic.html|publisher=Ioffe Institute, Russia}}</ref> }} |Section4={{Chembox Thermochemistry | Thermochemistry_ref = <ref>[[#Haynes|Haynes]], p. 5.23</ref> | DeltaHf = −88.7 [[Kilojoule per mole|kJ/mol]] | DeltaGf = −77.0 [[Kilojoule per mole|kJ/mol]] | Entropy = 59.8 J/(mol·K) | HeatCapacity = 45.4 J/(mol·K) }} |Section7={{Chembox Hazards | ExternalSDS = [https://web.archive.org/web/20061111080639/http://www.espimetals.com/msds's/indiumphosphide.pdf External MSDS] | MainHazards = Toxic, hydrolysis to [[phosphine]] | NFPA-H = | NFPA-F = | NFPA-R = | NFPA-S = | FlashPt = }} |Section8={{Chembox Related | OtherAnions = [[Indium nitride]]<br/>[[Indium arsenide]]<br/>[[Indium antimonide]] | OtherCations = [[Aluminium phosphide]]<br/>[[Gallium phosphide]] | OtherCompounds = [[Indium gallium phosphide]]<br/>[[Aluminium gallium indium phosphide]]<br/>[[Gallium indium arsenide antimonide phosphide]] }} }} '''Indium phosphide''' ('''InP''') is a binary [[semiconductor]] composed of [[indium]] and [[phosphorus]]. It has a face-centered cubic ("[[zincblende (crystal structure)|zincblende]]") [[crystal structure]], identical to that of [[gallium arsenide|GaAs]] and most of the [[List of semiconductor materials|III-V semiconductors]].
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