Editing Magnetoresistive RAM (section)

{{Short description|Type of computer memory}}
{{Use American English|date=January 2019}}{{Memory types}}
'''Magnetoresistive random-access memory''' ('''MRAM''') is a type of [[non-volatile random-access memory]] which stores data in [[magnetic domain]]s.<ref>{{cite patent |country=United States |number=4731757A |url=https://patents.google.com/patent/US4731757A/en|title=Magnetoresistive memory including thin film storage cells having tapered ends}}</ref> Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even [[universal memory]].<ref>{{Cite journal | last1 = Akerman | first1 = J. | title = APPLIED PHYSICS: Toward a Universal Memory | doi = 10.1126/science.1110549 | journal = Science | volume = 308 | issue = 5721 | pages = 508–510 | year = 2005 | pmid = 15845842| s2cid = 60577959 }}</ref> Currently, memory technologies in use such as [[Flash memory|flash RAM]] and [[Dynamic random-access memory|DRAM]] have practical advantages that have so far kept MRAM in a niche role in the market.