Editing Silicon on insulator (section)

{{short description|Technology in semiconductor manufacturing}}
{{Hatnote|For silicon on insulator optical devices, see [[Silicon photonics]].}}
In [[semiconductor manufacturing]], '''silicon on insulator''' ('''SOI''') technology is fabrication of [[silicon]] semiconductor devices in a layered silicon–insulator–silicon [[substrate (materials science)|substrate]], to reduce [[parasitic capacitance]] within the device, thereby improving performance.<ref name="celler">{{cite journal |last1=Celler |first1=G. K. |last2=Cristoloveanu |first2=S. |title=Frontiers of silicon-on-insulator |journal=[[Journal of Applied Physics]] |volume=93 |issue=9 |page=4955 |year=2003 |doi=10.1063/1.1558223 |bibcode=2003JAP....93.4955C }}</ref> SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an [[electrical insulator]], typically [[silicon dioxide]] or [[sapphire]] (these types of devices are called [[silicon on sapphire]], or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices.<ref>{{cite book |title=SOI design: analog, memory and digital techniques |first1=Andrew |last1=Marshall |first2=Sreedhar |last2=Natarajan |year=2002 |publisher=Kluwer |isbn=0-7923-7640-4}}</ref> The insulating layer and topmost silicon layer also vary widely with application.<ref>{{cite book |title=Silicon-on-Insulator Technology: Materials to VLSI |first=Jean-Pierre |last=Colinge |publisher=Springer |year=1991 |isbn=978-0-7923-9150-0}}</ref>