Editing Insulated-gate bipolar transistor (section)

==Device structure==

[[Image:IGBT Cross Section.jpg|right|thumb|Cross-section of a typical IGBT showing internal connection of MOSFET and bipolar device]]

An IGBT cell is constructed similarly to an n-channel vertical-construction [[power MOSFET]], except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP [[bipolar junction transistor]].
This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel [[MOSFET]]. The whole structure comprises a four layered NPNP.<ref name=":0" /><ref name=":2" /><ref name=":3" /><ref name=":4" />