Editing Silicon on sapphire (section)

== History ==
In 1963, [[Harold M. Manasevit]] was the first to document epitaxial growth of silicon on sapphire while working at the [[Autonetics]] division of [[North American Aviation]] (now [[Boeing]]). In 1964, he published his findings with colleague William Simpson in the ''Journal of Applied Physics''.<ref name="Manasevit_1964"/> In 1965, C.W. Mueller and P.H. Robinson [[semiconductor device fabrication|fabricated]] a [[MOSFET]] (metal–oxide–semiconductor field-effect transistor) using the silicon-on-sapphire process at [[RCA Laboratories]].<ref>{{cite journal |last1=Mueller |first1=C. W. |last2=Robinson |first2=P. H. |title=Grown-film silicon transistors on sapphire |journal=[[Proceedings of the IEEE]] |date=December 1964 |volume=52 |issue=12 |pages=1487–90 |doi=10.1109/PROC.1964.3436}}</ref>

SOS was first used in [[aerospace]] and [[military]] applications because of its inherent [[radiation hardened|resistance to radiation]]. More recently, patented advancements in SOS processing and design have been made by [[Peregrine Semiconductor]], allowing SOS to be commercialized in high-volume for high-performance radio-frequency (RF) applications.