Editing Quantum tunnelling (section)

==== Tunnel field-effect transistors ====
{{Main|Tunnel field-effect transistor}}

A European research project demonstrated [[field effect transistors]] in which the gate (channel) is controlled via quantum tunnelling rather than by thermal injection, reducing gate voltage from ≈1 volt to 0.2 volts and reducing power consumption by up to 100×. If these transistors can be scaled up into [[Vlsi|VLSI chips]], they would improve the performance per power of [[integrated circuit]]s.<ref>{{cite journal|last1=Ionescu|first1=Adrian M.|last2=Riel|first2=Heike|author2-link=Heike Riel|year=2011|title=Tunnel field-effect transistors as energy-efficient electronic switches |journal=[[Nature (journal)|Nature]]|volume=479|issue=7373|pages=329–337|bibcode=2011Natur.479..329I|doi=10.1038/nature10679|pmid=22094693|s2cid=4322368}}</ref><ref>{{Cite journal|last1=Vyas|first1=P. B. |last2=Naquin |first2=C. |last3=Edwards |first3=H. |last4=Lee |first4=M. |last5=Vandenberghe |first5=W. G.|last6=Fischetti|first6=M. V.|date=2017-01-23|title=Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices|url=https://aip.scitation.org/doi/10.1063/1.4974469 |journal=Journal of Applied Physics |volume=121 |issue=4 |pages=044501 |doi=10.1063/1.4974469|bibcode=2017JAP...121d4501V|issn=0021-8979}}</ref>