Editing Diode (section)

===Junction diodes===

====p–n junction diode====
{{Main article|p–n diode}}
A p–n junction diode is made of a crystal of [[semiconductor]], usually silicon, but [[germanium]] and [[gallium arsenide]] are also used. Impurities are added to it to create a region on one side that contains negative [[charge carrier]]s (electrons), called an [[n-type semiconductor]], and a region on the other side that contains positive charge carriers ([[Electron hole|holes]]), called a [[p-type semiconductor]]. When the n-type and p-type materials are attached together, a momentary flow of electrons occurs from the n to the p side resulting in a third region between the two where no charge carriers are present. This region is called the [[depletion region]] because there are no charge carriers (neither electrons nor holes) in it. The diode's terminals are attached to the n-type and p-type regions. The boundary between these two regions, called a [[p–n junction]], is where the action of the diode takes place. When a sufficiently higher [[Electric potential|electrical potential]] is applied to the P side (the [[anode]]) than to the N side (the [[cathode]]), it allows electrons to flow through the depletion region from the N-type side to the P-type side. The junction does not allow the flow of electrons in the opposite direction when the potential is applied in reverse, creating, in a sense, an electrical [[check valve]].

====Schottky diode====
{{Main article|Schottky diode}}
Another type of junction diode, the [[Schottky diode]], is formed from a [[metal–semiconductor junction]] rather than a p–n junction, which reduces capacitance and increases switching speed.<ref name="skyworks_01">{{cite web| url = http://www.skyworksinc.com/uploads/documents/200826A.pdf| title = Skyworks Solutions, Inc., ''Mixer and Detector Diodes''}}</ref><ref>{{cite web| url = https://www.microsemi.com/product-directory/rf-microwave-a-millimeter-wave/1575-diodes-schottky| title = Microsemi Corporation Schottky web page}}</ref>