Open main menu
Home
Random
Recent changes
Special pages
Community portal
Preferences
About Wikipedia
Disclaimers
Incubator escapee wiki
Search
User menu
Talk
Dark mode
Contributions
Create account
Log in
Editing
Electron mobility
(section)
Warning:
You are not logged in. Your IP address will be publicly visible if you make any edits. If you
log in
or
create an account
, your edits will be attributed to your username, along with other benefits.
Anti-spam check. Do
not
fill this in!
===Ionized impurity scattering=== Semiconductors are doped with donors and/or acceptors, which are typically ionized, and are thus charged. The Coulombic forces will deflect an electron or hole approaching the ionized impurity. This is known as ''[[ionized impurity scattering]]''. The amount of deflection depends on the speed of the carrier and its proximity to the ion. The more heavily a material is doped, the higher the probability that a carrier will collide with an ion in a given time, and the smaller the [[mean free time]] between collisions, and the smaller the mobility. When determining the strength of these interactions due to the long-range nature of the Coulomb potential, other impurities and free carriers cause the range of interaction with the carriers to reduce significantly compared to bare Coulomb interaction. If these scatterers are near the interface, the complexity of the problem increases due to the existence of crystal defects and disorders. Charge trapping centers that scatter free carriers form in many cases due to defects associated with dangling bonds. Scattering happens because after trapping a charge, the defect becomes charged and therefore starts interacting with free carriers. If scattered carriers are in the inversion layer at the interface, the reduced dimensionality of the carriers makes the case differ from the case of bulk impurity scattering as carriers move only in two dimensions. Interfacial roughness also causes short-range scattering limiting the mobility of quasi-two-dimensional electrons at the interface.<ref name=sct />
Edit summary
(Briefly describe your changes)
By publishing changes, you agree to the
Terms of Use
, and you irrevocably agree to release your contribution under the
CC BY-SA 4.0 License
and the
GFDL
. You agree that a hyperlink or URL is sufficient attribution under the Creative Commons license.
Cancel
Editing help
(opens in new window)