Editing High-electron-mobility transistor (section)

===Induced HEMT===
In contrast to a modulation-doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate, since the charge carriers are "induced" to the [[2DEG]] plane rather than created by dopants. The absence of a doped layer enhances the electron mobility significantly when compared to their modulation-doped counterparts. This level of cleanliness provides opportunities to perform research into the field of [[Quantum billiard ball|quantum billiards]] for [[quantum chaos]] studies, or applications in ultra stable and ultra sensitive electronic devices.<ref>{{Cite journal |last1=Hu |first1=Zhixiang |last2=Zhou |first2=Licheng |last3=Li |first3=Long |last4=Ying |first4=Binzhou |last5=Zhao |first5=Yunong |last6=Wang |first6=Peng |last7=Li |first7=Huayao |last8=Zhang |first8=Yang |last9=Liu |first9=Huan |date=18 April 2023 |title=Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO2 Detection |journal=Chemosensors |language=en |volume=11 |issue=4 |pages=252 |doi=10.3390/chemosensors11040252 |doi-access=free |issn=2227-9040}}</ref>