Editing Phase-change memory (section)

==Timeline==
*'''January 1955''': Kolomiets and Gorunova revealed semiconducting properties of [[chalcogenide glass]]es.<ref>{{cite journal|doi=10.1002/pssb.19640070202 | volume=7 | issue=2 | title=Vitreous Semiconductors (I) | year=1964 | journal=Physica Status Solidi B | pages=359–372 | last1 = Kolomiets | first1 = B. T.| bibcode=1964PSSBR...7..359K | s2cid=222432031 }}</ref><ref>{{cite journal|doi=10.1002/pssb.19640070302 | volume=7 | issue=3 | title=Vitreous Semiconductors (II) | year=1964 | journal=Physica Status Solidi B | pages=713–731 | last1 = Kolomiets | first1 = B. T.| bibcode=1964PSSBR...7..713K }}</ref>
*'''September 1966''': [[Stanford Ovshinsky]] files first patent on phase-change technology
*'''January 1969''': Charles H. Sie published a dissertation at Iowa State University on chalcogenide phase-change-memory device
*'''June 1969''': US Patent 3,448,302 (Shanefield) licensed to Ovshinsky claims first reliable operation of PRAM device
*'''September 1970''': [[Gordon Moore]] publishes research in [[Electronics Magazine]]
*'''June 1999''': Ovonyx joint venture is formed to commercialize PRAM technology
*'''November 1999''': Lockheed Martin works with Ovonyx on PRAM for space applications
*'''February 2000''': Intel invests in Ovonyx, licenses technology
*'''December 2000''': ST Microelectronics licenses PRAM technology from Ovonyx
*'''March 2002''': Macronix files a patent application for transistor-less PRAM
*'''July 2003''': Samsung begins work on PRAM technology
*'''2003 through 2005''': PRAM-related patent applications filed by Toshiba, Hitachi, Macronix, Renesas, Elpida, Sony, Matsushita, Mitsubishi, Infineon and more
*'''August 2004''': Nanochip licenses PRAM technology from Ovonyx for use in MEMS probe storage
*'''August 2004''': Samsung announces successful 64&nbsp;Mbit PRAM array
*'''February 2005''': Elpida licenses PRAM technology from Ovonyx
*'''September 2005''': Samsung announces successful 256&nbsp;Mbit PRAM array, touts 400&nbsp;μA programming current
*'''October 2005''': Intel increases investment in Ovonyx
*'''December 2005'''; Hitachi and Renesas announce 1.5&nbsp;V PRAM with 100&nbsp;μA programming current
*'''December 2005''': Samsung licenses PRAM technology from Ovonyx
*'''July 2006''': BAE Systems begins selling the first commercial PRAM chip
*'''September 2006''': Samsung announces 512&nbsp;Mbit PRAM device
*'''October 2006''': Intel and STMicroelectronics show a 128&nbsp;Mbit PRAM chip
*'''December 2006''': IBM Research Labs demonstrate a prototype 3 by 20 nanometers<ref>{{Cite web|url=http://www.techtree.com/India/News/Phase_Change_Memory_to_Replace_Flash/551-77782-581.html|archive-url=https://web.archive.org/web/20070927213502/http://www.techtree.com/India/News/Phase_Change_Memory_to_Replace_Flash/551-77782-581.html |url-status=dead |title=Phase Change to Replace Flash?|archive-date=September 27, 2007}}</ref>
*'''January 2007''': [[Qimonda]] licenses PRAM technology from Ovonyx
*'''April 2007''': Intel's chief technology officer Justin Rattner is set to give the first public demonstration of the company's PRAM (phase-change RAM) technology <ref>{{Cite web|url=https://www.computerworld.com/|title=IT news, careers, business technology, reviews|website=Computerworld}}</ref>
*'''October 2007''': [[Hynix]] begins pursuing PRAM by licensing Ovonyx' technology
*'''February 2008''': Intel and STMicroelectronics announce four-state MLC PRAM<ref name=review/> and begin shipping samples to customers.<ref name="numonyx_sample" />
*'''December 2008''': Numonyx announces mass production 128&nbsp;Mbit PRAM device to selected customer.
*'''June 2009''': Samsung's phase-change RAM will go into mass production starting in June<ref>[https://www.engadget.com/2009/05/05/samsungs-pram-chips-go-into-mass-production-in-june/ Engadget Samsung PRAM chips go into mass production]</ref>
*'''September 2009''': Samsung announces mass production start of 512&nbsp;Mbit PRAM device<ref>{{Cite web|url=http://www.eetimessupplynetwork.com/220100470?cid=RSSfeed_eetsn_eetsnRSS|title=Samsung moves phase-change memory to production}}{{Dead link|date=September 2024 |bot=InternetArchiveBot |fix-attempted=yes }}</ref>
*'''October 2009''': Intel and Numonyx announce they have found a way to stack phase-change memory arrays on one die<ref>{{Cite web|url=https://www.intel.com/pressroom/archive/releases/2009/20091028corp.htm|title=Intel and Numonyx Achieve Research Milestone with Stacked, Cross Point Phase Change Memory Technology|website=www.intel.com}}</ref>
*'''December 2009''': Numonyx announces 1&nbsp;Gb 45&nbsp;nm product<ref>[http://investors.micron.com/releasedetail.cfm?ReleaseID=467227 Numonyx to Present Phase-Change Memory Research Results at Leading Technology Industry Conference]</ref>
*'''April 2010''': Numonyx releases Omneo PRAM Series (P8P and P5Q), both in 90&nbsp;nm.<ref>{{Cite web |url=http://www.numonyx.com/en-US/About/PressRoom/Releases/Pages/NewPCMDevices.aspx |title=Numonyx Memory Solutions - Numonyx Introduces New Phase Change Memory Devices |date=April 25, 2010 |website= |archive-url=https://web.archive.org/web/20100425035721/http://www.numonyx.com/en-US/About/PressRoom/Releases/Pages/NewPCMDevices.aspx |archive-date=25 April 2010 |url-status=dead}}</ref>
*'''April 2010''': Samsung releases 512&nbsp;Mbit PRAM with 65&nbsp;nm process, in Multi-Chip-Package.<ref>{{Cite web|url=https://www.samsung.com/us/|archive-url=https://web.archive.org/web/20100821115849/http://www.samsung.com/us/aboutsamsung/news/newsIrRead.do?news_ctgry=irnewsrelease&page=1&news_seq=18828&rdoPeriod=ALL&from_dt=&to_dt=&search_keyword= |url-status=dead |title=Page Not Found - SAMSUNG|archive-date=August 21, 2010|website=Samsung Electronics America}}</ref>
*'''February 2011''': Samsung presented 58&nbsp;nm 1.8V 1&nbsp;Gb PRAM.<ref>{{cite book |first=H. |last=Chung |display-authors=etal |chapter=A 58nm 1.8V 1&nbsp;Gb PRAM with 6.4&nbsp;MB/s program BW |title=2011 IEEE International Solid-State Circuits Conference |year=2011 |isbn= 978-1-61284-303-2|pages=500–2 |doi=10.1109/ISSCC.2011.5746415|s2cid=206996875 }}</ref>
*'''February 2012''': Samsung presented 20&nbsp;nm 1.8V 8&nbsp;Gb PRAM<ref>[http://www.miracd.com/ISSCC2012/WebAP/PDF/AP_Full.pdf A 20nm 1.8V 8Gb PRAM with 40MB/s Program Bandwidth] {{webarchive|url=https://web.archive.org/web/20120131223524/http://www.miracd.com/ISSCC2012/WebAP/PDF/AP_Full.pdf |date=2012-01-31 }}</ref>
*'''July 2012''': Micron announces availability of Phase-Change Memory for mobile devices - the first PRAM solution in volume production<ref>[http://investors.micron.com/releasedetail.cfm?ReleaseID=692563 Micron Announces Availability of Phase Change Memory for Mobile Devices]</ref>
*'''January 2014''': Micron withdraws all PCM parts from the market.<ref>{{cite web |url=https://www.theregister.co.uk/2014/01/14/phase_change_micron_drops_phase_change_memory_products/ |title=Micron: Hot DRAM. We don't need no steenkin' PCM |last1=Mellor |first1=Chris |date=14 January 2014 |website=www.theregister.co.uk |publisher=The Register |access-date=14 January 2014}}</ref>
*'''May 2014''': IBM demonstrates combining PCM, conventional NAND, and DRAM on a single controller<ref>{{cite web |first=Joel |last=Hruska |title=IBM demonstrates next-gen phase-change memory that's up to 275 times faster than your SSD |date=8 May 2014 |publisher=ExtremeTech |url=http://www.extremetech.com/extreme/182096-ibm-demonstrates-next-gen-phase-change-memory-thats-up-to-275-times-faster-than-your-ssd}}</ref>
*'''August 2014''': Western Digital demonstrates prototype PCM storage with 3 million I/Os and 1.5 microsecond latency<ref>{{cite web |first=Joel |last=Hruska |title=Western Digital's HGST division creates new phase-change SSD that's orders of magnitude faster than any NAND flash drive on the market |date=6 August 2014 |publisher=ExtremeTech |url=http://www.extremetech.com/extreme/187577-hitachis-new-phase-change-ssd-is-orders-of-magnitude-faster-than-any-nand-flash-drive-on-the-market}}</ref>
*'''July 2015''': Intel and Micron announced [[3D Xpoint]] memory where phase-change alloy is used as a storage part of a memory cell.