Editing Gallium nitride (section)

=== Metal-organic vapour phase epitaxy ===
Blue, white and ultraviolet [[Light-emitting diode|LED]]s are grown on industrial scale by [[Metalorganic vapour-phase epitaxy|metalorganic vapour-phase epitaxy (MOVPE)]].<ref>{{Cite patent|number=US8357945B2|title=Gallium nitride crystal and method of making same|gdate=2013-01-22|invent1=D'Evelyn|invent2=Park|invent3=LeBoeuf|invent4=Rowland|inventor1-first=Mark Philip|inventor2-first=Dong-Sil|inventor3-first=Steven Francis|inventor4-first=Larry Burton|url=https://patents.google.com/patent/US8357945B2/en}}</ref><ref>{{Cite web |title=Google Patents |url=https://patents.google.com/?q=gallium+nitride&assignee=cornell |access-date=2022-10-20 |website=patents.google.com}}</ref> The precursors are [[ammonia]] with either [[trimethylgallium]] or [[triethylgallium]], the carrier gas being [[nitrogen]] or [[hydrogen]]. Growth temperature ranges between {{val|800|and|1100|u=°C}}. Introduction of [[trimethylaluminium]] and/or [[trimethylindium]] is necessary for growing quantum wells and other kinds of [[heterostructure]]s.