Editing Dislocation (section)

==== Climb ====
''Dislocation climb'' is an alternative mechanism of dislocation motion that allows an edge dislocation to move out of its slip plane. The driving force for dislocation climb is the movement of vacancies through a crystal lattice.  If a vacancy moves next to the boundary of the extra half plane of atoms that forms an edge dislocation, the atom in the half plane closest to the vacancy can ''jump'' and fill the vacancy.  This atom shift ''moves'' the vacancy in line with the half plane of atoms, causing a shift, or positive climb, of the dislocation.  The process of a vacancy being absorbed at the boundary of a half plane of atoms, rather than created, is known as negative climb.  Since dislocation climb results from individual atoms ''jumping'' into vacancies, climb occurs in single atom diameter increments.

During positive climb, the crystal shrinks in the direction perpendicular to the extra half plane of atoms because atoms are being removed from the half plane.  Since negative climb involves an addition of atoms to the half plane, the crystal grows in the direction perpendicular to the half plane.  Therefore, compressive stress in the direction perpendicular to the half plane promotes positive climb, while tensile stress promotes negative climb.  This is one main difference between slip and climb, since slip is caused by only shear stress.

One additional difference between dislocation slip and climb is the temperature dependence.  Climb occurs much more rapidly at high temperatures than low temperatures due to an increase in vacancy motion.  Slip, on the other hand, has only a small dependence on temperature.