Editing Electron mobility (section)

===Alloy scattering===
In compound (alloy) semiconductors, which many thermoelectric materials are, scattering caused by the perturbation of crystal potential due to the random positioning of substituting atom species in a relevant sublattice is known as alloy scattering. This can only happen in ternary or higher alloys as their crystal structure forms by randomly replacing some atoms in one of the sublattices (sublattice) of the crystal structure. Generally, this phenomenon is quite weak but in certain materials or circumstances, it can become dominant effect limiting conductivity. In bulk materials, interface scattering is usually ignored.<ref name=sct /><ref name="ssp">Ibach, Harald.; Luth, Hans. Solid-state physics : an introduction to principles of materials science / Harald Ibach, Hans Luth. New York: Springer, 2009. -(Advanced texts in physics) {{ISBN|978-3-540-93803-3}}</ref><ref name="bulusu">{{cite journal | doi = 10.1016/j.spmi.2008.02.008 | volume=44 | title=Review of electronic transport models for thermoelectric materials | year=2008 | journal=Superlattices and Microstructures | pages=1–36 | last1 = Bulusu | first1 = A. | issue=1 | bibcode=2008SuMi...44....1B}}.</ref><ref name="pallab">Bhattacharya, Pallab. Semiconductor optoelectronic devices / Pallab Bhattacharya. Upper Saddle River (NJ): Prentice-Hall, 1997. {{ISBN|0-13-495656-7}} (nid.)</ref><ref name="Takeda">Y. Takeda and T.P. Pearsall, "Failure of Mattheissen's Rule in the Calculation of Carrier Mobility and Alloy Scattering Effects in Ga0.47In0.53As", Electronics Lett. 17, 573-574 (1981).</ref>