Editing Gallium nitride (section)

=== Molecular beam epitaxy ===
Commercially, GaN crystals can be grown using [[molecular beam epitaxy]] or MBE. This process can be further modified to reduce dislocation densities.  First, an ion beam is applied to the growth surface in order to create nanoscale roughness.  Then, the surface is polished. This process takes place in a vacuum. Polishing methods typically employ a liquid electrolyte and UV irradiation to enable mechanical removal of a thin oxide layer from the wafer. More recent methods have been developed that utilize solid-state [[polymer electrolytes]] that are solvent-free and require no radiation before polishing.<ref>{{Cite journal|date=2018-12-01|title=Liquid electrolyte-free electrochemical oxidation of GaN surface using a solid polymer electrolyte toward electrochemical mechanical polishing|journal=Electrochemistry Communications|language=en|volume=97|pages=110–113|doi=10.1016/j.elecom.2018.11.006|issn=1388-2481|doi-access=free|last1=Murata |first1=Junji |last2=Nishiguchi |first2=Yoshito |last3=Iwasaki |first3=Takeshi }}</ref>