Editing Electromigration (section)

=== Electromigration and technology computer aided design ===
The complete mathematical model describing electromigration consists of several partial differential equations (PDEs) <ref name="Basaran_Lin03" >C. Basaran, M. Lin, and H. Ye : ''A Thermodynamic Model for Electrical Current Induced Damage.'' International Journal of Solids and Structures, Vol 40, pp. 7315-7327, 2003.</ref> which need to be solved for three-dimensional geometrical domains representing segments of an interconnect structure. Such a mathematical model forms the basis for simulation of electromigration in modern technology computer aided design (TCAD) tools.<ref name="Ceric_Selberherr11" >{{cite journal|last1=Ceric|first1=H.|last2=Selberherr|first2=S.|title=Electromigration in submicron interconnect features of integrated circuits|journal=Materials Science and Engineering: R: Reports|volume=71|issue=5–6|year=2011|pages=53–86|issn=0927-796X|doi=10.1016/j.mser.2010.09.001}}</ref>
Use of TCAD tools for detailed investigations of electromigration induced interconnect degradation is gaining importance. Results of TCAD studies in combination with reliability tests lead to modification of design rules improving the interconnect resistance to electromigration.<ref name="Orio_Ceric12" >{{cite journal|last1=de Orio|first1=R.L.|last2=Ceric|first2=H.|last3=Selberherr|first3=S.|title=Electromigration failure in a copper dual-damascene structure with a through silicon via|journal=Microelectronics Reliability|volume=52|issue=9–10|year=2012|pages=1981–1986|issn=0026-2714|doi=10.1016/j.microrel.2012.07.021|pmid=23564974|pmc=3608028|bibcode=2012MiRe...52.1981D }}</ref>