Editing Electromigration (section)

=== Electromigration due to IR drop noise of the on-chip power grid network/interconnect ===
{{Confusing section|date=February 2022}}
The electromigration degradation of the on-chip power grid network/interconnect depends on the IR drop noise of the power grid interconnect.
The electromigration-aware lifetime of the power grid interconnects as well as the chip decreases if the chip suffers from a high value of the IR drop noise.<ref>{{Cite book |doi = 10.1109/ISVLSI.2018.00018|chapter = PGIREM: Reliability-Constrained IR Drop Minimization and Electromigration Assessment of VLSI Power Grid Networks Using Cooperative Coevolution|title = 2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)|pages = 40–45|year = 2018|last1 = Dey|first1 = Sukanta|last2 = Dash|first2 = Satyabrata|last3 = Nandi|first3 = Sukumar|last4 = Trivedi|first4 = Gaurav|isbn = 978-1-5386-7099-6|s2cid = 51984331}}</ref>