Editing Flash memory (section)

====Construction====
Growth of a group of V-NAND cells begins with an alternating stack of conducting (doped) polysilicon layers and insulating silicon dioxide layers.<ref name="vnand" />

The next step is to form a cylindrical hole through these layers. In practice, a 128&nbsp;[[Gbit]] V-NAND chip with 24 layers of memory cells requires about 2.9 billion such holes. Next, the hole's inner surface receives multiple coatings, first silicon dioxide, then silicon nitride, then a second layer of silicon dioxide. Finally, the hole is filled with conducting (doped) polysilicon.<ref name="vnand" />