Editing Flash memory (section)

====Performance====
{{As of|2013|post=,}} V-NAND flash architecture allows read and write operations twice as fast as conventional NAND and can last up to 10 times as long, while consuming 50 percent less power. They offer comparable physical bit density using 10-nm lithography but may be able to increase bit density by up to two orders of magnitude, given V-NAND's use of up to several hundred layers.<ref name="vnand" /> As of 2020, V-NAND chips with 160 layers are under development by Samsung.<ref name="techspot-20200420">{{Cite news |last=Potoroaca |first=Adrian |date=20 April 2020 |title=Samsung said to be developing industry's first 160-layer NAND flash memory chip |work=TechSpot |url=https://www.techspot.com/news/84905-samsung-developing-industry-first-160-layer-nand-flash.html |url-status=live |archive-url=https://web.archive.org/web/20231102130037/https://www.techspot.com/news/84905-samsung-developing-industry-first-160-layer-nand-flash.html |archive-date=2 November 2023 }}</ref> As the number of layers increases, the capacity and endurance of flash memory may be increased.