Editing Transistor (section)

===Other transistor types===
[[File:Transistor on portuguese pavement.jpg|thumb|A transistor symbol created on [[Portuguese pavement]] at the [[University of Aveiro]]]]
{{For|early bipolar transistors|Bipolar junction transistor#Bipolar transistors}}
* [[Field-effect transistor]] (FET):
** [[Metal–oxide–semiconductor field-effect transistor]] (MOSFET), where the gate is insulated by a shallow layer of insulator
*** [[PMOS logic|p-type MOS]] (PMOS)
*** [[NMOS logic|n-type MOS]] (NMOS)
*** [[CMOS|Complementary MOS]] (CMOS)
**** [[RF CMOS]], for [[radiofrequency]] amplification, reception
*** [[Multi-gate field-effect transistor]] (MuGFET)
**** [[Fin field-effect transistor]] (FinFET), source/drain region shapes fins on the silicon surface
****GAAFET, Similar to FinFET but nanowires are used instead of fins, the nanowires are stacked vertically and are surrounded on 4 sides by the gate
****  MBCFET, a variant of GAAFET that uses horizontal nanosheets instead of nanowires, made by Samsung. Also known as RibbonFET (made by Intel) and as horizontal nanosheet transistor.
*** [[Thin-film transistor]] (TFT), used in [[liquid-crystal display|LCD]] and [[OLED]] displays, types include amorphous silicon, LTPS, LTPO and IGZO transistors 
*** [[Floating-gate MOSFET]] (FGMOS), for [[non-volatile storage]]
*** [[Power MOSFET]], for power electronics
**** [[LDMOS|lateral diffused MOS]] (LDMOS)
** [[Carbon nanotube field-effect transistor]] (CNFET, CNTFET), where the channel material is replaced by a carbon nanotube
** Ferroelectric field-effect transistor ([[Fe FET]]), uses ferroelectric materials
** [[Junction gate field-effect transistor]] (JFET), where the gate is insulated by a reverse-biased p–n junction
** [[Metal–semiconductor field-effect transistor]] (MESFET), similar to JFET with a Schottky junction instead of a p–n junction
*** [[High-electron-mobility transistor]] (HEMT): GaN (gallium nitride), SiC (silicon carbide), Ga<sub>2</sub>O<sub>3</sub> (gallium oxide), GaAs (gallium arsenide) transistors, MOSFETs, etc.
** Negative-capacitance FET (NC-FET)
** [[Inverted-T field-effect transistor]] (ITFET)
** [[Fast-reverse epitaxial diode field-effect transistor]] (FREDFET)
** [[Organic field-effect transistor]] (OFET), in which the semiconductor is an organic compound
** [[Ballistic transistor (disambiguation)]]
** FETs used to sense the environment
*** [[Ion-sensitive field-effect transistor]] (ISFET), to measure ion concentrations in solution,
*** [[Electrolyte–oxide–semiconductor field-effect transistor]] (EOSFET), [[neurochip]],
*** [[Deoxyribonucleic acid field-effect transistor]] (DNAFET).
*** Field-effect transistor-based biosensor ([[Bio-FET]])
* [[Bipolar junction transistor]] (BJT):
** [[Heterojunction bipolar transistor]], up to several hundred GHz, common in modern ultrafast and RF circuits
** [[Schottky transistor]]
** [[avalanche transistor]]
** [[File: Darlington transistor MJ1000.jpg|thumb|A [[Darlington transistor]] with the upper case removed so the transistor chip (the small square) can be seen. It is effectively two transistors on the same chip. One is much larger than the other, but both are large in comparison to transistors in [[large-scale integration]] because this particular example is intended for power applications.]] [[Darlington transistor]]s are two BJTs connected together to provide a high current gain equal to the product of the current gains of the two transistors
** [[Insulated-gate bipolar transistor]]s (IGBTs) use a medium-power IGFET, similarly connected to a power BJT, to give a high input impedance. Power diodes are often connected between certain terminals depending on specific use. IGBTs are particularly suitable for heavy-duty industrial applications. The [[ASEA Brown Boveri]] (ABB) ''5SNA2400E170100'' ,<ref>{{cite web |url=http://library.abb.com/GLOBAL/SCOT/scot256.nsf/VerityDisplay/E700072B04381DD9C12571FF002D2CFE/$File/5SNA%202400E170100_5SYA1555-03Oct%2006.pdf |title=IGBT Module 5SNA 2400E170100 |access-date=June 30, 2012 |url-status=dead |archive-url=https://web.archive.org/web/20120426020121/http://library.abb.com/GLOBAL/SCOT/scot256.nsf/VerityDisplay/E700072B04381DD9C12571FF002D2CFE/$File/5SNA%202400E170100_5SYA1555-03Oct%2006.pdf |archive-date=April 26, 2012 }}</ref> intended for three-phase power supplies, houses three n–p–n IGBTs in a case measuring 38 by 140 by 190&nbsp;mm and weighing 1.5&nbsp;kg. Each IGBT is rated at 1,700 volts and can handle 2,400 amperes
** [[Phototransistor]].
** [[Emitter-switched bipolar transistor]] (ESBT) is a monolithic configuration of a high-voltage bipolar transistor and a low-voltage power MOSFET in [[cascode]] topology. It was introduced by STMicroelectronics in the 2000s,<ref>{{cite conference |doi=10.1109/IAS.2003.1257745 |title=A new monolithic emitter-switching bipolar transistor (ESBT) in high-voltage converter applications |first1=S. |last1=Buonomo |first2=C. |last2=Ronsisvalle |first3=R. |last3=Scollo |author4=STMicroelectronics  |author-link4=STMicroelectronics |first5=S. |last5=Musumeci |first6=R. |last6=Pagano |first7=A. |last7=Raciti |author8= University of Catania Italy |author-link8=University of Catania |date=October 16, 2003 |conference=38th IAS annual Meeting on Conference Record of the Industry Applications Conference |editor=IEEE |editor-link=Institute of Electrical and Electronics Engineers |volume=3 of 3 |location=Salt Lake City |pages=1810–1817  }}</ref> and abandoned a few years later around 2012.<ref>{{cite web |url=https://www.st.com/en/power-transistors/esbts.html?querycriteria=productId=SC1775 |title=ESBTs  |author=STMicroelectronics  |author-link=STMicroelectronics  |website=www.st.com|access-date=February 17, 2019 |quote=ST no longer offers these components, this web page is empty, and datasheets are obsoletes  }}</ref>
** [[Multiple-emitter transistor]], used in [[transistor–transistor logic]] and integrated current mirrors
** [[Multiple-base transistor]], used to amplify very-low-level signals in noisy environments such as the pickup of a [[record player]] or [[RF front end|radio front ends]]. Effectively, it is a very large number of transistors in parallel where, at the output, the signal is added constructively, but random noise is added only [[stochastic]]ally.<ref>Zhong Yuan Chang, Willy M. C. Sansen, ''Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies'', page 31, Springer, 1991 {{ISBN|0792390962}}.</ref>
* [[Tunnel field-effect transistor]], where it switches by modulating [[quantum tunneling]] through a barrier.
* [[Diffusion transistor]], formed by diffusing dopants into semiconductor substrate; can be both BJT and FET.
* [[Unijunction transistor]], which can be used as a simple pulse generator. It comprises the main body of either p-type or n-type semiconductor with ohmic contacts at each end (terminals ''Base1'' and ''Base2''). A junction with the opposite semiconductor type is formed at a point along the length of the body for the third terminal (''Emitter'').
* [[Single-electron transistor]]s (SET), consist of a gate island between two tunneling junctions. The tunneling current is controlled by a voltage applied to the gate through a capacitor.<ref>{{cite web |url=http://snow.stanford.edu/~shimbo/set.html |title=Single Electron Transistors |publisher=Snow.stanford.edu |access-date=June 30, 2012 |url-status=dead |archive-url=https://web.archive.org/web/20120426015942/http://snow.stanford.edu/~shimbo/set.html |archive-date=April 26, 2012 }}</ref>
* [[Nanofluidic transistor]], controls the movement of ions through sub-microscopic, water-filled channels.<ref>{{cite web |last=Sanders |first=Robert |url=http://www.berkeley.edu/news/media/releases/2005/06/28_transistor.shtml |title=Nanofluidic transistor, the basis of future chemical processors |publisher=Berkeley.edu |date=June 28, 2005 |access-date=June 30, 2012 |url-status=live |archive-url=https://web.archive.org/web/20120702182324/http://www.berkeley.edu/news/media/releases/2005/06/28_transistor.shtml |archive-date=July 2, 2012 }}</ref>
* [[Multigate device]]s:
** [[Tetrode transistor]]
** [[Pentode transistor]]
** [[Trigate transistor]] (prototype by Intel)
** [[Dual-gate field-effect transistor]]s have a single channel with two gates in [[cascode]], a configuration optimized for ''high-frequency amplifiers'', ''mixers'', and [[oscillators]].
* [[Junctionless nanowire transistor]] (JNT), uses a simple nanowire of silicon surrounded by an electrically isolated ''wedding ring'' that acts to gate the flow of electrons through the wire. 
* [[Nanoscale vacuum-channel transistor]], when in 2012, NASA and the National Nanofab Center in South Korea were reported to have built a prototype vacuum-channel transistor in only 150 nanometers in size, can be manufactured cheaply using standard silicon semiconductor processing, can operate at high speeds even in hostile environments, and could consume just as much power as a standard transistor.<ref>{{cite web |url=http://www.gizmag.com/nasa-vacuum-channel-transistor/22626/ |title=The return of the vacuum tube? |publisher=Gizmag.com |date=May 28, 2012 |access-date=May 1, 2016 |url-status=live |archive-url=https://web.archive.org/web/20160414122940/http://www.gizmag.com/nasa-vacuum-channel-transistor/22626/ |archive-date=April 14, 2016 }}</ref>
* [[Organic electrochemical transistor]].
* [[Solaristor]] (from solar cell transistor), a two-terminal gate-less self-powered phototransistor.
* Germanium–tin transistor<ref>{{cite web | url=https://www.azom.com/news.aspx?newsID=61206 | title=New Type of Transistor from a Germanium–Tin Alloy Developed | date=April 28, 2023 }}</ref>
* Wood transistor<ref>{{cite web | url=https://spectrum.ieee.org/wood-transistor | title=Timber! The World's First Wooden Transistor – IEEE Spectrum }}</ref><ref>{{cite web | url=https://www.theregister.com/2023/05/01/wooden_transistor_sweden/ | title=Boffins claim to create the world's first wooden transistor }}</ref>
* Paper transistor<ref>{{Cite web|url=https://spectrum.ieee.org/paper-transistor|title=Paper Transistor – IEEE Spectrum|website=[[IEEE]]}}</ref>
* [[Communicant Semiconductor Technologies|Carbon-doped silicon–germanium (Si–Ge:C)]] transistor
* Diamond transistor<ref>{{Cite web|url=https://spectrum.ieee.org/this-diamond-transistor-is-still-raw-but-its-future-looks-bright|title=This Diamond Transistor Is Still Raw, But Its Future Looks Bright – IEEE Spectrum|website=[[IEEE]]}}</ref>
* Aluminum nitride transistor<ref>{{Cite web|url=https://spectrum.ieee.org/aluminum-nitride|title=The New, New Transistor – IEEE Spectrum|website=[[IEEE]]}}</ref>
* Super-lattice castellated field effect transistors<ref>{{Cite web|url=https://semiengineering.com/chip-industry-week-in-review-23/|title=Chip Industry Week In Review|first=The SE|last=Staff|date=February 23, 2024|website=Semiconductor Engineering}}</ref>