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Ellipsometry
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==Basic principles== The measured signal is the change in polarization as the incident radiation (in a known state) interacts with the material structure of interest ([[Reflected light|reflected]], [[Absorption (electromagnetic radiation)|absorbed]], [[Scattered radiation|scattered]], or [[Transmitted light|transmitted]]). The polarization change is quantified by the amplitude ratio, Ξ¨, and the phase difference, Ξ (defined below). Because the signal depends on the thickness as well as the material properties, ellipsometry can be a universal tool for contact free determination of thickness and optical constants of films of all kinds.<ref name="TompkinsIrene2005">{{cite book|author1=Harland Tompkins|author2=Eugene A Irene|title=Handbook of Ellipsometry|url=https://books.google.com/books?id=6PQf1fSzHHEC|date=6 January 2005|publisher=William Andrew|isbn=978-0-8155-1747-4}}</ref> Upon the analysis of the change of [[Polarization (waves)|polarization]] of light, ellipsometry can yield information about layers that are thinner than the [[wavelength]] of the probing light itself, even down to a single [[atom]]ic layer. Ellipsometry can probe the complex [[refractive index]] or [[dielectric function]] tensor, which gives access to fundamental physical parameters like those listed above. It is commonly used to characterize film thickness for single layers or complex multilayer stacks ranging from a few [[angstrom]]s or tenths of a [[nanometer]] to several [[micrometre|micrometer]]s with an excellent accuracy.
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