Editing High-electron-mobility transistor (section)

== History ==
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at [[Fujitsu]] in Japan.<ref name="Mimura2002">{{cite journal |last1=Mimura |first1=Takashi  |title=The early history of the high electron mobility transistor (HEMT) |journal=IEEE Transactions on Microwave Theory and Techniques |date=March 2002 |volume=50 |issue=3 |pages=780–782 |doi=10.1109/22.989961|bibcode=2002ITMTT..50..780M }}</ref> The basis for the HEMT was the [[GaAs]] (gallium arsenide) [[MOSFET]] (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard [[silicon]] (Si) MOSFET since 1977. He conceived the HEMT in the spring of 1979, when he read about a modulated-doped heterojunction [[superlattice]] developed at [[Bell Labs]] in the United States,<ref name="Mimura2002"/> by Ray Dingle, [[Arthur Gossard]] and [[Horst Störmer]] who filed a [[patent]] in April 1978.<ref>{{cite patent | country=US | number=4163237 | title=High mobility multilayered heterojunction devices employing modulated doping | inventor=Ray Dingle, Arthur Gossard and Horst Störmer}}</ref> Mimura filed a patent disclosure for a HEMT in August 1979, and then a [[patent]] later that year.<ref>{{cite journal |last1=Mimura |first1=Takashi |title=Development of High Electron Mobility Transistor |journal=Japanese Journal of Applied Physics |date=8 December 2005 |volume=44 |issue=12R |pages=8263–8268 |doi=10.1143/JJAP.44.8263 |bibcode=2005JaJAP..44.8263M |s2cid=3112776 |url=http://pdfs.semanticscholar.org/f7bd/535554c853c7b2502acaed610e5bd7589a5a.pdf |archive-url=https://web.archive.org/web/20190308183933/http://pdfs.semanticscholar.org/f7bd/535554c853c7b2502acaed610e5bd7589a5a.pdf |url-status=dead |archive-date=8 March 2019 |issn=1347-4065}}</ref> The first demonstration of a HEMT device, the D-HEMT, was presented by Mimura and Satoshi Hiyamizu in May 1980, and then they later demonstrated the first E-HEMT in August 1980.<ref name="Mimura2002"/>

Independently, Daniel Delagebeaudeuf and Tranc Linh Nuyen, while working at [[Thomson-CSF]] in France, filed a patent for a similar type of field-effect transistor in March 1979. It also cites the Bell Labs patent as an influence.<ref>{{cite patent|country=US |number=4471366 |title=Field effect transistor with high cut-off frequency and process for forming same |inventor=Daniel Delagebeaudeuf and Tranc L. Nuyen}} ([https://patents.google.com/patent/US4471366 Google Patents])</ref> The first demonstration of an "inverted" HEMT was presented by Delagebeaudeuf and Nuyen in August 1980.<ref name="Mimura2002"/>

One of the earliest mentions of a GaN-based HEMT is in the 1993 ''Applied Physics Letters'' article, by Khan ''et al''.<ref>{{Cite journal|url=https://aip.scitation.org/doi/10.1063/1.109775|doi=10.1063/1.109775|title=High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction|year=1993|last1=Asif Khan|first1=M.|last2=Bhattarai|first2=A.|last3=Kuznia|first3=J. N.|last4=Olson|first4=D. T.|journal=Applied Physics Letters|volume=63|issue=9|pages=1214–1215|bibcode=1993ApPhL..63.1214A|url-access=subscription}}</ref> Later, in 2004, P.D. Ye and B. Yang ''et al'' demonstrated a [[GaN]] (gallium nitride) [[metal–oxide–semiconductor]] HEMT (MOS-HEMT). It used [[atomic layer deposition]] (ALD) [[aluminum oxide]] (Al<sub>2</sub>O<sub>3</sub>) film both as a [[gate dielectric]] and for [[surface passivation]].<ref>{{cite journal |last1=Ye |first1=P. D. |last2=Yang |first2=B. |last3=Ng |first3=K. K. |last4=Bude |first4=J. |last5=Wilk |first5=G. D. |last6=Halder |first6=S. |last7=Hwang |first7=J. C. M. |title=GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al2O3 AS GATE DIELECTRIC AND SURFACE PASSIVATION |journal=International Journal of High Speed Electronics and Systems |date=1 September 2004 |volume=14 |issue=3 |pages=791–796 |doi=10.1142/S0129156404002843 |issn=0129-1564}}</ref>