Editing Integrated gate-commutated thyristor (section)

== Reverse bias ==
{{Duplication|date=May 2025|dupe=Gate_turn-off_thyristor#Reverse_bias|section=y}}
IGCT are available with or without reverse blocking capability.  Reverse blocking capability adds to the forward voltage drop because of the need to have a long, low-doped P1 region.

IGCTs capable of blocking reverse voltage are known as symmetrical IGCT, abbreviated S-IGCT or SGCT. Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same.  The typical application for symmetrical IGCTs is in current source inverters.

IGCTs incapable of blocking reverse voltage are known as asymmetrical IGCT, abbreviated A-IGCT or AGCT. They typically have a reverse breakdown rating in the tens of volts. A-IGCTs are used where either a reverse conducting diode is applied in parallel (for example, in voltage source inverters) or where reverse voltage would never occur (for example, in switching power supplies or DC traction choppers).

Asymmetrical IGCTs can be fabricated with a reverse conducting diode in the same package.  These are known as [[RC-IGCT]], for reverse conducting IGCT.