Editing Power semiconductor device (section)

=== Power MOSFET ===
{{Main|Power MOSFET}}
{{See also|FET amplifier|Insulated-gate bipolar transistor|MOSFET|LDMOS|VMOS}}

The MOSFET was invented at Bell Labs between 1955 and 1960<ref name=":0">{{Cite journal |last1=Huff |first1=Howard |last2=Riordan |first2=Michael |date=2007-09-01 |title=Frosch and Derick: Fifty Years Later (Foreword) |url=https://iopscience.iop.org/article/10.1149/2.F02073IF |journal=The Electrochemical Society Interface |volume=16 |issue=3 |pages=29 |doi=10.1149/2.F02073IF |issn=1064-8208}}</ref><ref>{{Cite journal |last1=Frosch |first1=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of the Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}</ref><ref>{{Cite journal |last=KAHNG |first=D. |date=1961 |title=Silicon-Silicon Dioxide Surface Device |url=https://doi.org/10.1142/9789814503464_0076 |journal=Technical Memorandum of Bell Laboratories|pages=583–596 |doi=10.1142/9789814503464_0076 |isbn=978-981-02-0209-5 }}</ref><ref>{{Cite book |last=Lojek |first=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer-Verlag Berlin Heidelberg |isbn=978-3-540-34258-8 |location=Berlin, Heidelberg |page=321}}</ref><ref>{{Cite journal |last1=Ligenza |first1=J.R. |last2=Spitzer |first2=W.G. |date=1960 |title=The mechanisms for silicon oxidation in steam and oxygen |url=https://linkinghub.elsevier.com/retrieve/pii/0022369760902195 |journal=Journal of Physics and Chemistry of Solids |language=en |volume=14 |pages=131–136 |doi=10.1016/0022-3697(60)90219-5}}</ref><ref name="Lojek1202">{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=[[Springer Science & Business Media]] |isbn=9783540342588 |page=120}}</ref> Generations of MOSFET transistors enabled power designers to achieve performance and density levels not possible with bipolar transistors.<ref>{{cite news |title=Rethink Power Density with GaN |url=https://www.electronicdesign.com/power/rethink-power-density-gan |access-date=23 July 2019 |work=[[Electronic Design]] |date=21 April 2017}}</ref> Due to improvements in MOSFET technology (initially used to produce [[integrated circuit]]s), the [[power MOSFET]] became available in the 1970s.

In 1969, [[Hitachi]] introduced the first vertical power MOSFET,<ref>{{cite book |last1=Oxner |first1=E. S. |title=Fet Technology and Application |date=1988 |publisher=[[CRC Press]] |isbn=9780824780500 |page=18 |url=https://books.google.com/books?id=0AE-0e-sAnsC&pg=PA18}}</ref> which would later be known as the [[VMOS]] (V-groove MOSFET).<ref name="powerelectronics">{{cite journal |title=Advances in Discrete Semiconductors March On |url=https://www.powerelectronics.com/content/advances-discrete-semiconductors-march |journal=Power Electronics Technology |publisher=[[Informa]] |pages=52–6 |access-date=31 July 2019 |date=September 2005 |archive-url=https://web.archive.org/web/20060322222716/http://powerelectronics.com/mag/509PET26.pdf |archive-date=22 March 2006 |url-status=live }}</ref> From 1974, [[Yamaha Corporation|Yamaha]], [[JVC]], [[Pioneer Corporation]], [[Sony]] and [[Toshiba]] began manufacturing [[audio amplifier]]s with power MOSFETs.<ref name="Duncan177">{{cite book |last1=Duncan |first1=Ben |title=High Performance Audio Power Amplifiers |date=1996 |publisher=[[Elsevier]] |isbn=9780080508047 |pages=[https://archive.org/details/highperfomanceau0000dunc/page/177 177-8, 406] |url=https://archive.org/details/highperfomanceau0000dunc/page/177 }}</ref> [[International Rectifier]] introduced a 25&nbsp;A, 400&nbsp;V power MOSFET in 1978.<ref name="DEP">Jacques Arnould, Pierre Merle ''Dispositifs de l'électronique de puissance'', Éditions Hermès, {{ISBN|2-86601-306-9}} (in French)</ref> This device allows operation at higher frequencies than a bipolar transistor, but is limited to low voltage applications.

The [[Insulated-gate bipolar transistor]] (IGBT) was developed in the 1980s, and became widely available in the 1990s. This component has the power handling capability of the bipolar transistor and the advantages of the isolated gate drive of the power MOSFET.