Open main menu
Home
Random
Recent changes
Special pages
Community portal
Preferences
About Wikipedia
Disclaimers
Incubator escapee wiki
Search
User menu
Talk
Dark mode
Contributions
Create account
Log in
Editing
Semiconductor device
(section)
Warning:
You are not logged in. Your IP address will be publicly visible if you make any edits. If you
log in
or
create an account
, your edits will be attributed to your username, along with other benefits.
Anti-spam check. Do
not
fill this in!
===Diode=== {{Main|Diode}} A semiconductor diode is a device typically made from a single [[p–n junction]]. At the junction of a p-type and an [[n-type semiconductor]], there forms a [[depletion region]] where current conduction is inhibited by the lack of mobile charge carriers. When the device is ''forward biased'' (connected with the p-side, having a higher [[electric potential]] than the n-side), this depletion region is diminished, allowing for significant conduction. Contrariwise, only a very small current can be achieved when the diode is ''reverse biased'' (connected with the n-side at higher electric potential than the p-side, and thus the depletion region expanded). Exposing a semiconductor to [[light]] can generate [[electron–hole pair]]s, which increases the number of free carriers and thereby the conductivity. Diodes optimized to take advantage of this phenomenon are known as ''[[photodiode]]s''. [[Compound semiconductor]] diodes can also produce light, as in [[light-emitting diode]]s and [[laser diode]]
Edit summary
(Briefly describe your changes)
By publishing changes, you agree to the
Terms of Use
, and you irrevocably agree to release your contribution under the
CC BY-SA 4.0 License
and the
GFDL
. You agree that a hyperlink or URL is sufficient attribution under the Creative Commons license.
Cancel
Editing help
(opens in new window)