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Surface micromachining
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==Fabrication process== Micro-machining starts with a silicon wafer or other substrate upon which new layers are grown. These layers are selectively etched by [[photo-lithography]]; either a wet etch involving an [[acid]], or a dry etch involving an [[ionized gas]] (or [[Plasma (physics)|plasma]]). Dry etching can combine chemical etching with physical etching or [[ion]] bombardment. Surface micro-machining involves as many layers as are needed with a different mask (producing a different pattern) on each layer. Modern [[integrated circuit]] [[Semiconductor device fabrication|fabrication]] uses this technique and can use as many as 100 layers. Micro-machining is a younger technology and usually uses no more than 5 or 6 layers. Surface micro-machining uses developed technology (although sometimes not enough for demanding applications) which is easily repeatable for volume production. ===Sacrificial layers=== A sacrificial layer is used to build complicated components, such as movable parts. For example, a suspended [[cantilever]] can be built by depositing and structuring a sacrificial layer, which is then selectively removed at the locations where the future beams must be attached to the substrate (i.e. the anchor points). A structural layer is then deposited on top of the [[polymer]] and structured to define the beams. Finally, the sacrificial layer is removed to release the beams, using a selective etch process that does not damage the structural layer. Many combinations of structural and sacrificial layers are possible. The combination chosen depends on the process. For example, it is important for the structural layer not to be damaged by the process used to remove the sacrificial layer.
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