Editing Wetting layer (section)

==Properties==
The wetting layer is a close-to mono-atomic layer with a thickness of typically 0.5 [[nanometer]]s.  The electronic properties of the [[quantum dot]] can change as a result of the wetting layer.<ref name="LeeLazarenkova2004">
{{cite journal|last1=Lee|first1=Seungwon|last2=Lazarenkova|first2=Olga L.|last3=von Allmen|first3=Paul|last4=Oyafuso|first4=Fabiano|last5=Klimeck|first5=Gerhard|title=Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots|journal=Physical Review B|volume=70|issue=12|year=2004|page=125307 |issn=1098-0121|doi=10.1103/PhysRevB.70.125307|arxiv=cond-mat/0405019|bibcode=2004PhRvB..70l5307L |s2cid=13994641 }}
</ref><ref name="KarraiWarburton2004">
{{cite journal|last1=Karrai|first1=Khaled|last2=Warburton|first2=Richard J.|last3=Schulhauser|first3=Christian|last4=Högele|first4=Alexander|last5=Urbaszek|first5=Bernhard|last6=McGhee|first6=Ewan J.|last7=Govorov|first7=Alexander O.|last8=Garcia|first8=Jorge M.|last9=Gerardot|first9=Brian D.|last10=Petroff|first10=Pierre M.|title=Hybridization of electronic states in quantum dots through photon emission|journal=Nature|volume=427|issue=6970|year=2004|pages=135–138|issn=0028-0836|doi=10.1038/nature02109|pmid=14712271 |bibcode=2004Natur.427..135K |s2cid=4424992 }}
</ref><ref name="ShahzadehSabaeian2014">{{cite journal|last1=Shahzadeh|first1=Mohammadreza|last2=Sabaeian|first2=Mohammad|title=The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots|journal=AIP Advances|volume=4|issue=6|year=2014|pages=067113|issn=2158-3226|doi=10.1063/1.4881980|bibcode=2014AIPA....4f7113S |doi-access=free}}</ref> Also, the [[strain (chemistry)|strain]] of the [[quantum dot]] can change due to the wetting layer.<ref name="SunLu2012">
{{cite journal|last1=Sun|first1=Chao|last2=Lu|first2=Pengfei|last3=Yu|first3=Zhongyuan|last4=Cao|first4=Huawei|last5=Zhang|first5=Lidong|title=Wetting layers effect on InAs/GaAs quantum dots|journal=Physica B: Condensed Matter|volume=407|issue=22|year=2012|pages=4440–4445|issn=0921-4526|doi=10.1016/j.physb.2012.07.039|bibcode=2012PhyB..407.4440S }}</ref>