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=== Thin film metrology === In the semiconductor industry, infrared light can be used to characterize materials such as thin films and periodic trench structures. By measuring the reflectance of light from the surface of a semiconductor wafer, the index of refraction (n) and the extinction Coefficient (k) can be determined via the [[Forouhi–Bloomer model|Forouhi–Bloomer dispersion equations]]. The reflectance from the infrared light can also be used to determine the critical dimension, depth, and sidewall angle of high aspect ratio trench structures.
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