Open main menu
Home
Random
Recent changes
Special pages
Community portal
Preferences
About Wikipedia
Disclaimers
Incubator escapee wiki
Search
User menu
Talk
Dark mode
Contributions
Create account
Log in
Editing
Flash memory
(section)
Warning:
You are not logged in. Your IP address will be publicly visible if you make any edits. If you
log in
or
create an account
, your edits will be attributed to your username, along with other benefits.
Anti-spam check. Do
not
fill this in!
===Read disturb=== The method used to read NAND flash memory can cause nearby cells in the same memory block to change over time (become programmed). This is known as read disturb. The threshold number of reads is generally in the hundreds of thousands of reads between intervening erase operations. If reading continually from one cell, that cell will not fail but rather one of the surrounding cells will on a subsequent read. To avoid the read disturb problem the flash controller will typically count the total number of reads to a block since the last erase. When the count exceeds a target limit, the affected block is copied over to a new block, erased, then released to the block pool. The original block is as good as new after the erase. If the flash controller does not intervene in time, however, a '''read disturb''' error will occur with possible data loss if the errors are too numerous to correct with an [[error-correcting code]].<ref name="micron-tn-29-17">{{Cite web |date=April 2010 |title=NAND Flash Design and Use Considerations Introduction |url=https://media-www.micron.com/-/media/client/global/documents/products/technical-note/nand-flash/tn2917.pdf |url-status=live |archive-url=https://web.archive.org/web/20220303140013/https://media-www.micron.com/-/media/client/global/documents/products/technical-note/nand-flash/tn2917.pdf |archive-date=3 March 2022 |access-date=29 July 2011 |publisher=[[Micron Technology]] |id=TN-29-17 }}</ref><ref name=NEA>{{cite web |title=Technology For Managing NAND Flash |last=Kawamatus |first=Tatsuya |publisher=Hagiwara sys-com co., LTD |access-date=15 May 2018 |url=http://read.pudn.com/downloads151/ebook/654250/0808002.pdf |archive-url=https://web.archive.org/web/20180515164812/http://read.pudn.com/downloads151/ebook/654250/0808002.pdf |archive-date=2018-05-15 |url-status=dead }}</ref><ref name="flash-memory-summit">{{Cite conference |date=August 2007 |title=The Inconvenient Truths of NAND Flash Memory |url=https://www.dslreports.com/r0/download/1507743~59e7b9dda2c0e0a0f7ff119a7611c641/flash_mem_summit_jcooke_inconvenient_truths_nand.pdf |conference=Flash Memory Summit 2007 |publisher=[[Micron Technology]] |archive-url=https://web.archive.org/web/20180215023326/http://www.dslreports.com/r0/download/1507743~59e7b9dda2c0e0a0f7ff119a7611c641/flash_mem_summit_jcooke_inconvenient_truths_nand.pdf |archive-date=15 February 2018 |last1=Cooke |url-status=live |first1=Jim }}</ref>
Edit summary
(Briefly describe your changes)
By publishing changes, you agree to the
Terms of Use
, and you irrevocably agree to release your contribution under the
CC BY-SA 4.0 License
and the
GFDL
. You agree that a hyperlink or URL is sufficient attribution under the Creative Commons license.
Cancel
Editing help
(opens in new window)