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Electron mobility
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====Using the linear region==== In this technique,<ref name=Rost/> the transistor is operated in the linear region (or "ohmic mode"), where V<sub>DS</sub> is small and <math>I_D \propto V_{GS}</math> with slope ''m''<sub>lin</sub>. Then the mobility is: <math display="block">\mu = m_\text{lin} \frac{L}{W} \frac{1}{V_{DS}} \frac{1}{C_i}.</math> This equation comes from the approximate equation for a MOSFET in the linear region: <math display="block">I_D= \mu C_i \frac{W}{L} \left( (V_{GS}-V_{th})V_{DS}-\frac{V_{DS}^2}{2} \right)</math> In practice, this technique may overestimate the true mobility, because if V<sub>DS</sub> is not small enough and V<sub>G</sub> is not large enough, the MOSFET may not stay in the linear region.<ref name=Rost2/>
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