Editing Flash memory (section)

===Invention and commercialization===
Modern [[EEPROM]] based on [[Field electron emission#Fowler–Nordheim tunneling|Fowler-Nordheim tunnelling]] to erase data was invented by Bernward and patented by [[Siemens]] in 1974.<ref>{{Cite patent|number=GB1517925A|title=Storage field effect transistors|gdate=1978-07-19|url=https://patents.google.com/patent/GB1517925A/en}}</ref> It was further developed between 1976 and 1978 by [[Eli Harari|Eliyahou Harari]] at [[Hughes Aircraft Company]], as well as by [[George Perlegos]] and others at Intel.<ref>{{cite web |last1=Simko |first1=Richard T. |date=17 March 1977 |title=Electrically programmable and electrically erasable MOS memory cell |url=https://patents.google.com/patent/US4119995A/en}}</ref><ref>{{cite web |last1=Frohman-Bentchkowsky |first1=Dov |last2=Mar |first2=Jerry |last3=Perlegos |first3=George |last4=Johnson |first4=William S. |date=15 December 1978 |title=Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |url=https://patents.google.com/patent/US4203158A/en}}</ref> This led to Masuoka's invention of flash memory at Toshiba in 1980.<ref name="forbes"/><ref>{{patent|US|4531203|Fujio Masuoka}}</ref><ref>{{US patent|4531203|Semiconductor memory device and method for manufacturing the same}}</ref> The improvement between EEPROM and flash being that flash is programmed in blocks while EEPROM is programmed in bytes. According to Toshiba, the name "flash" was suggested by Masuoka's colleague, Shōji Ariizumi, because the erasure process of the memory contents reminded him of the [[flash (photography)|flash of a camera]].<ref>{{cite web |url=http://www.eweek.com/c/a/Data-Storage/NAND-Flash-Memory-25-Years-of-Invention-Development-684048/ |archive-url=https://archive.today/20140818204913/http://www.eweek.com/c/a/Data-Storage/NAND-Flash-Memory-25-Years-of-Invention-Development-684048/ |url-status=dead |archive-date=18 August 2014 |title=NAND Flash Memory: 25 Years of Invention, Development – Data Storage – News & Reviews  |work=eWeek.com |access-date=18 August 2014 }}</ref> Masuoka and colleagues presented the invention of [[#NOR memories|NOR]] flash in 1984,<ref name="auto1">{{Cite web |title=Toshiba: Inventor of Flash Memory |url=http://www.flash25.toshiba.com |url-status=dead |archive-url=https://web.archive.org/web/20190620160642/http://www.flash25.toshiba.com/ |archive-date=20 June 2019 |access-date=20 June 2019 |website=[[Toshiba]] }}</ref><ref name="ieee-1984">{{Cite conference |last2=Asano |first2=M. |last3=Iwahashi |first3=H. |last4=Komuro |first4=T. |last5=Tanaka |first5=S. |date=December 1984 |title=A new flash E<sup>2</sup>PROM cell using triple polysilicon technology |conference=1984 [[International Electron Devices Meeting]] |location=San Francisco|pages=464–467 |doi=10.1109/IEDM.1984.190752 |s2cid=25967023 |first1=F. |last1=Masuoka }}</ref> and then [[#NAND memories|NAND]] flash at the ''[[Institute of Electrical and Electronics Engineers|IEEE]] 1987 International Electron Devices Meeting'' (IEDM) held in San Francisco.<ref>{{cite conference |title=New ultra high density EPROM and flash EEPROM with NAND structure cell |last1=Masuoka |first1=F. |last2=Momodomi |first2=M. |last3=Iwata |first3=Y. |last4=Shirota |first4=R. |year=1987 |pages=552–555 |conference=[[International Electron Devices Meeting|IEDM]] 1987 |book-title=Electron Devices Meeting, 1987 International |publisher=[[IEEE]]|doi=10.1109/IEDM.1987.191485}}</ref>

Toshiba commercially launched NAND flash memory in 1987.<ref name=":0">{{cite web |title=1987: Toshiba Launches NAND Flash |url=https://www.eweek.com/storage/1987-toshiba-launches-nand-flash |website=[[eWeek]] |date=11 April 2012 |access-date=20 June 2019}}</ref><ref name="computerhistory1971"/> [[Intel Corporation]] introduced the first commercial NOR type flash chip in 1988.<ref>{{cite web |url=http://www2.electronicproducts.com/NAND_vs_NOR_flash_technology-article-FEBMSY1-FEB2002.aspx |title=NAND vs. NOR flash technology: The designer should weigh the options when using flash memory |last=Tal |first=Arie |date=February 2002 |access-date=31 July 2010 |url-status=dead |archive-url=https://web.archive.org/web/20100728210327/http://www2.electronicproducts.com/NAND_vs_NOR_flash_technology-article-FEBMSY1-FEB2002.aspx |archive-date=28 July 2010}}</ref> NOR-based flash has long erase and write times, but provides full address and [[data bus]]es, allowing [[random access]] to any [[memory location]]. This makes it a suitable replacement for older [[read-only memory]] (ROM) chips, which are used to store program code that rarely needs to be updated, such as a computer's [[BIOS]] or the [[firmware]] of [[set-top box]]es. Its endurance may be from as little as 100 erase cycles for an on-chip flash memory,<ref name="rej09b0138_h8s2357.pdf">{{Cite web |date=October 2004 |title=H8S/2357 Group, H8S/2357F-ZTATTM, H8S/2398F-ZTATTM Hardware Manual |url=https://www.renesas.com/us/en/document/mas/h8s2357-group-h8s2357f-ztattm-h8s2398f-ztattm-hardware-manual |url-status=live |archive-url=https://web.archive.org/web/20230109212444/https://www.renesas.com/us/en/document/mas/h8s2357-group-h8s2357f-ztattm-h8s2398f-ztattm-hardware-manual |archive-date=9 January 2023 |access-date=23 January 2012 |publisher=[[Renesas Electronics|Renesas]] |page=574 |quote=The flash memory can be reprogrammed up to 100 times. }}</ref> to a more typical 10,000 or 100,000 erase cycles, up to 1,000,000 erase cycles.<ref name="amd-22271A">{{Cite web |date=July 2003 |title=AMD DL160 and DL320 Series Flash: New Densities, New Features |url=http://www.spansion.com/Support/Application%20Notes/AMD%20DL160%20and%20DL320%20Series%20Flash-%20New%20Densities,%20New%20Features.pdf |url-status=dead |archive-url=https://web.archive.org/web/20150924104223/http://www.spansion.com/Support/Application%20Notes/AMD%20DL160%20and%20DL320%20Series%20Flash-%20New%20Densities,%20New%20Features.pdf |archive-date=24 September 2015 |access-date=13 November 2014 |publisher=[[AMD]] |id=22271A |quote=The devices offer single-power-supply operation (2.7 V to 3.6 V), sector architecture, Embedded Algorithms, high performance, and a 1,000,000 program/erase cycle endurance guarantee. }}</ref> NOR-based flash was the basis of early flash-based removable media; [[CompactFlash]] was originally based on it, although later cards moved to less expensive NAND&nbsp;flash.

NAND flash has reduced erase and write times, and requires less chip area per cell, thus allowing greater storage density and lower cost per bit than NOR&nbsp;flash. However, the I/O interface of NAND&nbsp;flash does not provide a random-access external address bus. Rather, data must be read on a block-wise basis, with typical block sizes of hundreds to thousands of bits. This makes NAND&nbsp;flash unsuitable as a drop-in replacement for program ROM, since most microprocessors and microcontrollers require byte-level random access. In this regard, NAND&nbsp;flash is similar to other secondary [[data storage device]]s, such as hard disks and [[optical media]], and is thus highly suitable for use in mass-storage devices, such as [[memory card]]s and [[solid-state drive]]s (SSD). For example, SSDs store data using multiple NAND flash memory chips.

The first NAND-based removable memory card format was [[SmartMedia]], released in 1995. Many others followed, including [[MultiMediaCard]], [[Secure Digital]], [[Memory Stick]], and [[xD-Picture Card]].