Editing Gallium nitride (section)

=== LEDs ===
High-brightness GaN light-emitting diodes (LEDs) completed the range of primary colors, and made possible applications such as daylight-visible full-color LED displays, white LEDs and blue [[laser]] devices. The first GaN-based high-brightness LEDs used a thin film of GaN deposited via [[metalorganic vapour-phase epitaxy]] (MOVPE) on [[sapphire]]. Other substrates used are [[zinc oxide]], with [[lattice constant]] mismatch of only 2% and [[silicon carbide]] (SiC).<ref name=review>{{Cite journal | last1 = Morkoç | first1 = H. | last2 = Strite | first2 = S. | last3 = Gao | first3 = G. B. | last4 = Lin | first4 = M. E. | last5 = Sverdlov | first5 = B. | last6 = Burns | first6 = M. | doi = 10.1063/1.358463 | title = Large-band-gap SiC, III–V nitride, and II–VI ZnSe-based semiconductor device technologies | journal = Journal of Applied Physics | volume = 76 | issue = 3 | pages = 1363 | year = 1994 |bibcode = 1994JAP....76.1363M }}</ref> Group III nitride semiconductors are, in general, recognized as one of the most promising semiconductor families for fabricating optical devices in the visible short-wavelength and UV region.{{cn|date=September 2023}}