Editing Indium phosphide (section)

===High-speed optoelectronics===
InP is used as a substrate for [[epitaxy|epitaxial]] optoelectronic devices based other semiconductors, such as [[indium gallium arsenide]]. The devices include [[pseudomorphic heterojunction bipolar transistor]]s that could operate at 604&nbsp;GHz.<ref>[http://www.azom.com/news.aspx?newsID=2888 Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier]. Azom. April 2005</ref>

InP itself has a [[direct bandgap]], making it useful for [[optoelectronics]] devices like [[laser diode]]s and [[photonic integrated circuit]]s for the [[optical telecommunications]] industry, to enable [[wavelength-division multiplexing]] applications.<ref name=":0">[http://www.redherring.com/Home/4817 The Light Brigade] appeared in ''Red Herring'' in 2002. {{webarchive |url=https://web.archive.org/web/20110607095835/http://www.redherring.com/Home/4817 |date=June 7, 2011 }}</ref>  It is used in high-power and high-frequency electronics because of its superior [[electron velocity]] with respect to the more common semiconductors [[silicon]] and [[gallium arsenide]].