Open main menu
Home
Random
Recent changes
Special pages
Community portal
Preferences
About Wikipedia
Disclaimers
Incubator escapee wiki
Search
User menu
Talk
Dark mode
Contributions
Create account
Log in
Editing
Cadmium arsenide
(section)
Warning:
You are not logged in. Your IP address will be publicly visible if you make any edits. If you
log in
or
create an account
, your edits will be attributed to your username, along with other benefits.
Anti-spam check. Do
not
fill this in!
=== Electronic === The compound cadmium arsenide has a lower vapor pressure (0.8 atm) than both cadmium and arsenic separately. Cadmium arsenide does not decompose when it is vaporized and re-condensed. [[Semiconductor|Carrier Concentration]] in Cd<sub>3</sub>As<sub>2</sub> are usually (1–4)×10<sup>18</sup> electrons/cm<sup>3</sup>. Despite having high carrier concentrations, the electron mobilities are also very high (up to 10,000 cm<sup>2</sup>/(V·s) at room temperature).<ref>{{Cite journal | doi = 10.1002/pssb.2220940153| title = Inverted band structure of Cd<sub>3</sub>As<sub>2</sub>| journal = Physica Status Solidi B| volume = 94| pages = K57–K60| year = 1979| last1 = Dowgiałło-Plenkiewicz | first1 = B.| last2 = Plenkiewicz | first2 = P.| issue = 1| bibcode = 1979PSSBR..94...57D}}</ref> In 2014 Cd<sub>3</sub>As<sub>2</sub> was shown to be a [[semimetal]] material analogous to [[graphene]] that exists in a 3D form that should be much easier to shape into electronic devices.<ref>{{Cite journal | doi = 10.1038/ncomms4786| pmid = 24807399| title = Observation of a three-dimensional topological Dirac semimetal phase in high-mobility Cd<sub>3</sub>As<sub>2</sub>| journal = Nature Communications| volume = 5| pages = 3786| year = 2014| last1 = Neupane | first1 = M. | last2 = Xu | first2 = S. Y. | last3 = Sankar | first3 = R. | last4 = Alidoust | first4 = N. | last5 = Bian | first5 = G. | last6 = Liu | first6 = C. | last7 = Belopolski | first7 = I. | last8 = Chang | first8 = T. R. | last9 = Jeng | first9 = H. T. | last10 = Lin | first10 = H. | last11 = Bansil | first11 = A. | last12 = Chou | first12 = F. | last13 = Hasan | first13 = M. Z. | bibcode = 2014NatCo...5.3786N| arxiv = 1309.7892 }}</ref><ref name=doi3990/> Three-dimensional (3D) topological Dirac semimetals (TDSs) are bulk analogues of [[graphene]] that also exhibit non-trivial topology in its electronic structure that shares similarities with topological insulators. Moreover, a TDS can potentially be driven into other exotic phases (such as Weyl semimetals, axion insulators and topological [[superconductor]]s), [[Angle-resolved photoemission spectroscopy]] revealed a pair of 3D [[Dirac fermion]]s in Cd<sub>3</sub>As<sub>2</sub>. Compared with other 3D TDSs, for example, β-cristobalite {{chem|Bi|O|2}} and {{chem|Na|3Bi}}, Cd<sub>3</sub>As<sub>2</sub> is stable and has much higher Fermi velocities. In situ doping was used to tune its Fermi energy.<ref name=doi3990>{{Cite journal | doi = 10.1038/nmat3990| pmid = 24859642| title = A stable three-dimensional topological Dirac semimetal Cd<sub>3</sub>As<sub>2</sub>| journal = Nature Materials| volume = 13| issue = 7| pages = 677–81| year = 2014| last1 = Liu | first1 = Z. K.| last2 = Jiang | first2 = J.| last3 = Zhou | first3 = B.| last4 = Wang | first4 = Z. J.| last5 = Zhang | first5 = Y.| last6 = Weng | first6 = H. M.| last7 = Prabhakaran | first7 = D.| last8 = Mo | first8 = S. K. | last9 = Peng | first9 = H.| last10 = Dudin | first10 = P.| last11 = Kim | first11 = T.| last12 = Hoesch | first12 = M.| last13 = Fang | first13 = Z.| last14 = Dai | first14 = X.| last15 = Shen | first15 = Z. X.| last16 = Feng | first16 = D. L.| last17 = Hussain | first17 = Z.| last18 = Chen | first18 = Y. L.| bibcode = 2014NatMa..13..677L}}</ref>
Edit summary
(Briefly describe your changes)
By publishing changes, you agree to the
Terms of Use
, and you irrevocably agree to release your contribution under the
CC BY-SA 4.0 License
and the
GFDL
. You agree that a hyperlink or URL is sufficient attribution under the Creative Commons license.
Cancel
Editing help
(opens in new window)