Editing Dry etching (section)

==History==
Dry etching process was invented by Stephen M. Irving who also invented the [[plasma etching|plasma etching process]].<ref>{{cite journal | author=Irving S. | title=A Dry Photoresist Removal Method | year=1967 | journal= Journal of the Electrochemical Society}}</ref><ref>{{cite news | author=Irving S. | title=A Dry Photoresist Removal Method | year=1968 | publisher=Kodak Photoresist Seminar Proceedings}}</ref> The anisotropic dry etching process was developed by Hwa-Nien Yu at the [[IBM T.J. Watson Research Center]] in the early 1970s. It was used by Yu with [[Robert H. Dennard]] to [[semiconductor device fabrication|fabricate]] the first [[List of semiconductor scale examples|micron-scale]] [[MOSFET]]s (metal–oxide–semiconductor field-effect transistors) in the 1970s.<ref>{{cite journal |last1=Critchlow |first1=D. L. |title=Recollections on MOSFET Scaling |journal=IEEE Solid-State Circuits Society Newsletter |date=2007 |volume=12 |issue=1 |pages=19–22 |doi=10.1109/N-SSC.2007.4785536 |doi-access=free }}</ref>