Editing Gallium arsenide (section)

===Etching===
Wet etching of GaAs industrially uses an oxidizing agent such as [[hydrogen peroxide]] or [[bromine]] water,<ref>{{cite book |author1=Brozel, M. R. |title=Properties of Gallium Arsenide |author2=Stillman, G. E. |publisher=IEEE Inspec |year=1996 |isbn=978-0-85296-885-7}}</ref> and the same strategy has been described in a patent relating to processing scrap components containing GaAs where the {{chem|Ga||3+}} is complexed with a [[hydroxamic acid]] ("HA"), for example:<ref>"Oxidative dissolution of gallium arsenide and separation of gallium from arsenic" J. P. Coleman and B. F. Monzyk {{US patent|4759917}} (1988)</ref>
:GaAs + {{chem|H|2|O|2}} + "HA" → "GaA" complex + {{chem|H|3|AsO|4}} + 4 {{chem|H|2|O}}
This reaction produces [[arsenic acid]].<ref>{{cite journal |last1=Lova |first1=Paola |last2=Robbiano |first2=Valentina |last3=Cacialli |first3=Franco |last4=Comoretto |first4=Davide |last5=Soci |first5=Cesare |date=3 October 2018 |title=Black GaAs by Metal-Assisted Chemical Etching |url=https://discovery.ucl.ac.uk/id/eprint/10059695/ |journal=ACS Applied Materials & Interfaces |volume=10 |issue=39 |pages=33434–33440 |doi=10.1021/acsami.8b10370 |issn=1944-8244 |pmid=30191706 |s2cid=206490133}}</ref>