Editing Gallium nitride (section)

=== GaN transistors and power ICs ===
The very high [[breakdown voltages]],<ref>{{Cite journal | last1 = Dora | first1 = Y. | last2 = Chakraborty | first2 = A. | last3 = McCarthy | first3 = L. | last4 = Keller | first4 = S. | last5 = Denbaars | first5 = S. P. | last6 = Mishra | first6 = U. K. | doi = 10.1109/LED.2006.881020 | title = High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrated Slant Field Plates | journal = [[IEEE Electron Device Letters]] | volume = 27 | issue = 9 | pages = 713 | year = 2006 |bibcode = 2006IEDL...27..713D | s2cid = 38268864 }}</ref> high [[electron mobility]], and high [[saturation velocity]] of GaN has made it an ideal candidate for high-power and high-temperature microwave applications, as evidenced by its high [[Johnson's figure of merit]]. Potential markets for high-power/high-frequency devices based on GaN include [[microwave]] [[radio-frequency]] power amplifiers (e.g., those used in high-speed wireless data transmission) and high-voltage switching devices for power grids. A potential mass-market application for GaN-based RF [[transistor]]s is as the microwave source for [[microwave oven]]s, replacing the [[magnetron]]s currently used. The large band gap means that the performance of GaN transistors is maintained up to higher temperatures (~400&nbsp;°C<ref name=GS-WGN>{{Cite web|url=https://gansystems.com/gan-transistors/about-gan-systems/|title=Why GaN Systems|date=29 November 2023 }}</ref>) than silicon transistors (~150&nbsp;°C<ref name=GS-WGN/>) because it lessens the effects of [[Electrical resistivity and conductivity#In semiconductors and insulators|thermal generation of charge carriers]] that are inherent to any semiconductor. The first gallium nitride metal semiconductor field-effect transistors (GaN [[MESFET]]) were experimentally demonstrated in 1993<ref>{{Cite journal | last1 = Asif Khan | first1 = M. | last2 = Kuznia | first2 = J. N. | last3 = Bhattarai | first3 = A. R. | last4 = Olson | first4 = D. T. | title = Metal semiconductor field effect transistor based on single crystal GaN | doi = 10.1063/1.109549 | journal = Applied Physics Letters | volume = 62 | issue = 15 | pages = 1786 | year = 1993 |bibcode = 1993ApPhL..62.1786A }}</ref> and they are being actively developed.

In 2010, the first [[enhancement-mode]] GaN transistors became generally available.<ref name=EPC-EM-2010>{{cite journal|last=Davis|first=Sam|title=Enhancement Mode GaN MOSFET Delivers Impressive Performance|journal=Electronic Design|date=March 2010|volume=36|issue=3|url=https://www.electronicdesign.com/technologies/discrete-power-semis/article/21191975/enhancement-mode-gallium-nitride-mosfet-delivers-impressive-performance}}</ref> Only n-channel transistors were available.<ref name=EPC-EM-2010/> These devices were designed to replace power MOSFETs in applications where switching speed or power conversion efficiency is critical.  These transistors are built by growing a thin layer of GaN on top of a standard silicon wafer, often referred to as ''GaN-on-Si'' by manufacturers.<ref>{{Cite journal|title=GaN-on-silicon enablingGaN power electronics, but to capture less than 5%of LED making by 2020|url=http://www.semiconductor-today.com/features/PDF/SemiconductorToday_AprMay2014-GaN-on-silicon.pdf|journal=Compounds & AdvancedSilicon|publisher=SeminconductorTODAY|volume=9|issue=April/May 2014}}</ref> This allows the FETs to maintain costs similar to silicon power MOSFETs but with the superior electrical performance of GaN, and consists of growing GaN on silicon wafers using MOCVD Epitaxy.<ref>https://www.powerelectronicsnews.com/infineon-advances-gan-technology-with-300-mm-wafer-production/</ref> Another seemingly viable solution for realizing enhancement-mode GaN-channel HFETs is to employ a lattice-matched quaternary AlInGaN layer of acceptably low spontaneous polarization mismatch to GaN.<ref>{{Cite journal|last1=Rahbardar Mojaver|first1=Hassan|last2=Gosselin|first2=Jean-Lou|last3=Valizadeh|first3=Pouya|date=2017-06-27|title=Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors|journal=Journal of Applied Physics|volume=121|issue=24|pages=244502|doi=10.1063/1.4989836|bibcode=2017JAP...121x4502R |issn=0021-8979}}</ref>

GaN power ICs monolithically integrate a GaN FET, GaN-based drive circuitry and circuit protection into a single surface-mount device.<ref>{{cite web |title=GaN Power ICs |url=https://www.navitassemi.com/gan-power-ics/ |website=Navitas}}</ref><ref>{{cite web |title=GaN Integrated Circuits |url=https://epc-co.com/epc/Products/eGaNFETsandICs/eGaNIntegratedCircuits/ |website=EPC}}</ref>  Integration means that the gate-drive loop has essentially zero impedance, which further improves efficiency by virtually eliminating FET turn-off losses. Academic studies into creating low-voltage GaN power ICs began at the Hong Kong University of Science and Technology (HKUST) and the first devices were demonstrated in 2015. Commercial GaN power IC production began in 2018.

==== CMOS logic ====
In 2016 the first GaN [[CMOS logic]] using PMOS and NMOS transistors was reported with gate lengths of 0.5&nbsp;μm (gate widths of the PMOS and NMOS transistors were 500&nbsp;μm and 50&nbsp;μm, respectively).<ref name=sct-2016-cmos>{{Cite web|url=https://www.semiconductor-today.com/news_items/2016/feb/hrl_150216.shtml|title=HRL Laboratories claims first gallium nitride CMOS transistor fabrication|website=www.semiconductor-today.com}}</ref>