Editing High-electron-mobility transistor (section)

=== Advantages ===
The advantages of HEMTs over other transistor architectures, like the [[bipolar junction transistor]] and the [[MOSFET]], are the higher operating temperatures,<ref name="Meneghini2021"/> higher [[Breakdown voltage|breakdown strengths]], and lower specific on-state resistances,<ref name="Medjdoub2016"/> all in the case of GaN-based HEMTs compared to Si-based MOSFETs. Furthermore, InP-based HEMTs exhibit low noise performance and higher switching speeds.<ref name="Ajayan2021">{{cite journal |last1=Ajayan |first1=J. |last2=Nirmal |first2=D. |last3=Mathew |first3=Ribu |last4=Kurian |first4=Dheena |last5=Mohankumar |first5=P. |last6=Arivazhagan |first6=L. |last7=Ajitha |first7=D. |title=A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications |journal=Materials Science in Semiconductor Processing |year=2021 |volume=128 |pages=105753 |doi=10.1016/j.mssp.2021.105753 |url=https://www.sciencedirect.com/science/article/pii/S1369800121000949|url-access=subscription }}</ref>