Editing Indium tin oxide (section)

==Alternative synthesis methods==
ITO is typically deposited through expensive and energy-intensive processes that deal with physical [[vapor deposition]] (PVD). Such processes include [[sputtering]], which results in the formation of brittle layers.{{Citation needed|date=March 2016}} 
Because of the cost and energy of physical vapor deposition, with the required vacuum processing, alternative methods of preparing ITO are being investigated.<ref name="Fortunato 2007 242–247">{{cite journal|last=Fortunato|first=E. |author2=D. Ginley |author3=H. Hosono |author4=D.C. Paine|title=Transparent Conducting Oxides for Photovoltaics|journal=MRS Bulletin|date=March 2007|volume=32|issue=3 |pages=242–247|doi=10.1557/mrs2007.29|s2cid=136882786 }}</ref> 

===Tape casting process===
An alternative process that uses a particle-based technique, is known as the tape casting process. Because it is a particle-based technique, the ITO nano-particles are dispersed first, then placed in organic solvents for stability. [[Benzyl]] [[phthalate]] [[plasticizer]] and [[polyvinyl]] butyral binder have been shown to be helpful in preparing nanoparticle [[Slurry|slurries]]. Once the tape casting process has been carried out, the characterization of the green ITO tapes showed that optimal transmission went up to about 75%, with a lower bound on the [[Electrical resistance and conductance|electrical resistance]] of 2 Ω·cm.<ref name=":0" />

===Laser sintering===
Using ITO [[nanoparticles]] imposes a limit on the choice of substrate, owing to the high temperature required for [[sintering]]. As an alternative starting material, In-Sn alloy [[nanoparticles]] allow for a more diverse range of possible substrates.<ref>{{cite journal |last1=Ohsawa |first1=Masato |last2=Sakio |first2=Susumu |last3=Saito |first3=Kazuya |title=ITO透明導電膜形成用ナノ粒子インクの開発 |trans-title=Development of nanoparticle ink for ITO transparent conductive film formation |language=ja |journal=Journal of Japan Institute of Electronics Packaging |date=2011 |volume=14 |issue=6 |pages=453–459 |doi=10.5104/jiep.14.453 |doi-access=free }}</ref> A continuous conductive In-Sn alloy film is formed firstly, followed by oxidation to bring transparency. This two step process involves thermal annealing, which requires special atmosphere control and increased processing time. Because metal [[nanoparticles]] can be converted easily into a conductive metal film under the treatment of laser, laser [[sintering]] is applied to achieve products' homogeneous morphology. Laser sintering is also easy and less costly to use since it can be performed in air.<ref>{{cite journal |last1=Qin |first1=Gang |last2=Fan |first2=Lidan |last3=Watanabe |first3=Akira |title=Formation of indium tin oxide film by wet process using laser sintering |journal=Journal of Materials Processing Technology |date=January 2016 |volume=227 |pages=16–23 |doi=10.1016/j.jmatprotec.2015.07.011 }}</ref>

===Ambient gas conditions===
For example, using conventional methods but varying the ambient gas conditions to improve the optoelectronic properties<ref>{{cite journal |last1=Marikkannan |first1=M. |last2=Subramanian |first2=M. |last3=Mayandi |first3=J. |last4=Tanemura |first4=M. |last5=Vishnukanthan |first5=V. |last6=Pearce |first6=J. M. |title=Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films |journal=AIP Advances |date=January 2015 |volume=5 |issue=1 |pages=017128 |doi=10.1063/1.4906566 |bibcode=2015AIPA....5a7128M |doi-access=free }}</ref> as, for example, [[oxygen]] plays a major role in the properties of ITO.<ref>{{cite journal |last1=Gwamuri |first1=Jephias |last2=Marikkannan |first2=Murugesan |last3=Mayandi |first3=Jeyanthinath |last4=Bowen |first4=Patrick |last5=Pearce |first5=Joshua |title=Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices |journal=Materials |date=20 January 2016 |volume=9 |issue=1 |pages=63 |doi=10.3390/ma9010063 |pmid=28787863 |pmc=5456523 |bibcode=2016Mate....9...63G |doi-access=free }}</ref>

===Chemical shaving for very thin films===
There has been numerical modeling of [[plasmonic]] metallic nanostructures have shown great potential as a method of light management in thin-film nanodisc-patterned [[hydrogenated amorphous silicon]] (a-Si:H) solar [[photovoltaic]] (PV) cells. A problem that arises for plasmonic-enhanced PV devices is the requirement for 'ultra-thin' transparent conducting oxides (TCOs) with high transmittance and low enough resistivity to be used as device top contacts/electrodes. Unfortunately, most work on TCOs is on relatively thick layers and the few reported cases of thin TCO showed a marked decrease in conductivity. To overcome this it is possible to first grow a thick layer and then chemically shave it down to obtain a thin layer that is whole and highly conductive.<ref>{{cite journal |last1=Gwamuri |first1=Jephias |last2=Vora |first2=Ankit |last3=Mayandi |first3=Jeyanthinath |last4=Güney |first4=Durdu Ö. |last5=Bergstrom |first5=Paul L. |last6=Pearce |first6=Joshua M. |title=A new method of preparing highly conductive ultra-thin indium tin oxide for plasmonic-enhanced thin film solar photovoltaic devices |journal=Solar Energy Materials and Solar Cells |date=May 2016 |volume=149 |pages=250–257 |doi=10.1016/j.solmat.2016.01.028 |doi-access=free |bibcode=2016SEMSC.149..250G }}</ref>