Editing Transistor (section)

===MOSFET (MOS transistor)===
{{Main|MOSFET}}
[[File:1957(Figure_9)-Gate_oxide_transistor_by_Frosch_and_Derrick.png|thumb|310x310px|Diagram of one of the SiO2 transistor devices made by Frosch and Derrick<ref name="auto2"/>]]

In 1955, [[Carl Frosch]] and Lincoln Derick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects.<ref name=":0"/><ref>{{Cite patent|number=US2802760A|title=Oxidation of semiconductive surfaces for controlled diffusion|gdate=1957-08-13|invent1=Lincoln|invent2=Frosch|inventor1-first=Derick|inventor2-first=Carl J.|url=https://patents.google.com/patent/US2802760A}}</ref> By 1957 Frosch and Derick, using masking and predeposition, were able to manufacture silicon dioxide field effect transistors; the first planar transistors, in which drain and source were adjacent at the same surface.<ref name="auto2"/> They showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer.<ref name=":0" /><ref name="auto2"/> After this, J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides, fabricated a high quality Si/[[Silicon dioxide|SiO<sub>2</sub>]] stack and published their results in 1960.<ref>{{Cite journal |last1=Ligenza |first1=J. R. |last2=Spitzer |first2=W. G. |date=July 1, 1960 |title=The mechanisms for silicon oxidation in steam and oxygen |url=https://linkinghub.elsevier.com/retrieve/pii/0022369760902195 |journal=Journal of Physics and Chemistry of Solids |volume=14 |pages=131–136 |doi=10.1016/0022-3697(60)90219-5 |bibcode=1960JPCS...14..131L |issn=0022-3697}}</ref><ref name="Deal2">{{cite book |last1=Deal |first1=Bruce E. |title=Silicon materials science and technology |date=1998 |publisher=[[The Electrochemical Society]] |isbn=978-1566771931 |page=183 |chapter=Highlights Of Silicon Thermal Oxidation Technology |chapter-url=https://books.google.com/books?id=cr8FPGkiRS0C&pg=PA183}}</ref><ref>{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer Science & Business Media |isbn=978-3540342588 |page=322}}</ref>

Following this research, [[Mohamed Atalla]] and [[Dawon Kahng]] proposed a silicon MOS transistor in 1959<ref name="Bassett22">{{cite book |last1=Bassett |first1=Ross Knox |url=https://books.google.com/books?id=UUbB3d2UnaAC&pg=PA22 |title=To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology |date=2007 |publisher=[[Johns Hopkins University Press]] |isbn=978-0-8018-8639-3 |pages=22–23}}</ref> and successfully demonstrated a working MOS device with their Bell Labs team in 1960.<ref>{{cite journal |last1=Atalla |first1=M. |author1-link=Mohamed Atalla |last2=Kahng |first2=D. |author2-link=Dawon Kahng |date=1960 |title=Silicon-silicon dioxide field induced surface devices |journal=IRE-AIEE Solid State Device Research Conference}}</ref><ref>{{cite journal |title=1960 – Metal Oxide Semiconductor (MOS) Transistor Demonstrated |url=https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/ |journal=The Silicon Engine |publisher=[[Computer History Museum]] |access-date=January 16, 2023}}</ref> Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device.<ref name="auto3"/><ref name="auto4"/> With its [[MOSFET scaling|high scalability]],<ref>{{cite journal |last1=Motoyoshi |first1=M. |title=Through-Silicon Via (TSV) |journal=Proceedings of the IEEE |date=2009 |volume=97 |issue=1 |pages=43–48 |doi=10.1109/JPROC.2008.2007462 |s2cid=29105721 |url=https://pdfs.semanticscholar.org/8a44/93b535463daa7d7317b08d8900a33b8cbaf4.pdf |archive-url=https://web.archive.org/web/20190719120523/https://pdfs.semanticscholar.org/8a44/93b535463daa7d7317b08d8900a33b8cbaf4.pdf |url-status=dead |archive-date=July 19, 2019 |issn=0018-9219}}</ref> much lower power consumption, and higher density than bipolar junction transistors,<ref>{{cite news |title=Transistors Keep Moore's Law Alive |url=https://www.eetimes.com/author.asp?section_id=36&doc_id=1334068 |access-date=July 18, 2019 |work=[[EETimes]] |date=December 12, 2018}}</ref> the MOSFET made it possible to build [[Large scale integration|high-density]] integrated circuits,<ref name="computer history-transistor">{{cite web |title=Who Invented the Transistor? |url=https://www.computerhistory.org/atchm/who-invented-the-transistor/ |website=[[Computer History Museum]] |date=December 4, 2013 |access-date=July 20, 2019}}</ref> allowing the integration of more than 10,000 transistors in a single IC.<ref>{{cite journal |last1=Hittinger |first1=William C. |title=Metal-Oxide-Semiconductor Technology |journal=Scientific American |date=1973 |volume=229 |issue=2 |pages=48–59 |issn=0036-8733|jstor=24923169 |doi=10.1038/scientificamerican0873-48 |bibcode=1973SciAm.229b..48H }}</ref>

Bardeen and Brattain's 1948 inversion layer concept forms the basis of CMOS technology today.<ref>{{cite book |author=Howard R. Duff |title=AIP Conference Proceedings |date=2001 |volume=550 |pages=3–32 |chapter=John Bardeen and transistor physics |doi=10.1063/1.1354371 |doi-access=free}}</ref> The [[CMOS]] (complementary [[MOSFET|MOS]]) was invented by [[Chih-Tang Sah]] and [[Frank Wanlass]] at [[Fairchild Semiconductor]] in 1963.<ref name="computerhistory1963">{{cite web |title=1963: Complementary MOS Circuit Configuration is Invented |url=https://www.computerhistory.org/siliconengine/complementary-mos-circuit-configuration-is-invented/ |website=[[Computer History Museum]] |access-date=July 6, 2019}}</ref> The first report of a [[floating-gate MOSFET]] was made by Dawon Kahng and [[Simon Sze]] in 1967.<ref>D. Kahng and S. M. Sze, "A floating gate and its application to memory devices", ''The Bell System Technical Journal'', vol. 46, no. 4, 1967, pp. 1288–1295</ref>

In 1967, Bell Labs researchers Robert Kerwin, [[Donald L. Klein|Donald Klein]] and John Sarace developed the [[self-aligned gate]] (silicon-gate) MOS transistor, which Fairchild Semiconductor researchers [[Federico Faggin]] and Tom Klein used to develop the first [[silicon-gate]] MOS [[integrated circuit]].<ref name="computerhistory1968">{{cite web |title=1968: Silicon Gate Technology Developed for ICs |url=https://www.computerhistory.org/siliconengine/silicon-gate-technology-developed-for-ics/ |access-date=July 22, 2019 |website=[[Computer History Museum]]}}</ref>

A [[double-gate]] MOSFET was first demonstrated in 1984 by [[Electrotechnical Laboratory]] researchers Toshihiro Sekigawa and Yutaka Hayashi.<ref>{{cite book |last1=Colinge |first1=J.P. |title=FinFETs and Other Multi-Gate Transistors |date=2008 |publisher=Springer Science & Business Media |isbn=9780387717517 |page=11 |url=https://books.google.com/books?id=t1ojkCdTGEEC&pg=PA11}}</ref><ref>{{cite journal |last1=Sekigawa |first1=Toshihiro |last2=Hayashi |first2=Yutaka |title=Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate |journal=Solid-State Electronics |date=August 1, 1984 |volume=27 |issue=8 |pages=827–828 |doi=10.1016/0038-1101(84)90036-4 |issn=0038-1101|bibcode=1984SSEle..27..827S }}</ref> The [[FinFET]] (fin field-effect transistor), a type of 3D non-planar [[Multigate device|multi-gate]] MOSFET, originated from the research of Digh Hisamoto and his team at [[Hitachi|Hitachi Central Research Laboratory]] in 1989.<ref>{{cite web |title=IEEE Andrew S. Grove Award Recipients |url=https://www.ieee.org/about/awards/bios/grove-recipients.html |archive-url=https://web.archive.org/web/20180909112404/https://www.ieee.org/about/awards/bios/grove-recipients.html |url-status=dead |archive-date=September 9, 2018 |website=[[IEEE Andrew S. Grove Award]] |publisher=[[Institute of Electrical and Electronics Engineers]] |access-date=July 4, 2019}}</ref><ref>{{cite web |title=The Breakthrough Advantage for FPGAs with Tri-Gate Technology |url=https://www.intel.com/content/dam/www/programmable/us/en/pdfs/literature/wp/wp-01201-fpga-tri-gate-technology.pdf |publisher=[[Intel]] |year=2014 |access-date=July 4, 2019}}</ref>