Editing Flash memory (section)

===Timeline===
{{See also|Read-only memory#Timeline|Random-access memory#Timeline|Transistor count#Memory}}

{| class="wikitable"
! Date of introduction !! Chip name !! Memory Package Capacity<br/>Megabits (Mb), Gigabits (Gb), Terabits (Tb) || Flash type || Cell type || Layers or<br/>Stacks of Layers || Manufacturer(s) || Process || Area || Ref
|-
| 1984 || ? || ? || NOR || SLC || 1 || Toshiba || ? || ? || <ref name="auto1"/>
|-
| 1985 || ? || 256 kb || NOR || SLC || 1 || Toshiba || 2,000&nbsp;nm || ? || <ref name="stol">{{Cite web |title=Memory |url=http://maltiel-consulting.com/Semiconductor_technology_memory.html |url-status=live |archive-url=https://web.archive.org/web/20231102131915/http://maltiel-consulting.com/Semiconductor_technology_memory.html |archive-date=2 November 2023 |access-date=25 June 2019 |website=STOL (Semiconductor Technology Online) }}</ref>
|-
| 1987 || ? || ? || NAND || SLC || 1 || Toshiba || ? || ? || <ref name=":0"/>
|-
| 1989 || ? || 1 Mb || NOR || SLC || 1 || Seeq, Intel || ? || ? || <ref name="stol"/>
|-
|  ||  || 4 Mb || NAND || SLC || 1 || Toshiba || 1,000&nbsp;nm ||  || 
|-
| 1991 || ? || 16 Mb || NOR || SLC || 1 || Mitsubishi || 600&nbsp;nm || ? || <ref name="stol"/>
|-
| 1993 || DD28F032SA || 32 Mb || NOR || SLC || 1 || Intel || ? || 280&nbsp;mm² || <ref name="Intel-Product-Timeline">{{Cite web |date=July 2005 |title=A chronological list of Intel products. The products are sorted by date. |url=http://download.intel.com/museum/research/arc_collect/timeline/TimelineDateSort7_05.pdf |url-status=dead |archive-url=https://web.archive.org/web/20070809053720/http://download.intel.com/museum/research/arc_collect/timeline/TimelineDateSort7_05.pdf |archive-date=9 August 2007 |access-date=31 July 2007 |publisher=[[Intel]] |work=Intel museum }}</ref><ref name="dd28f032sa-datasheet">{{Cite web |title=DD28F032SA Datasheet |url=https://pdf.datasheetcatalog.com/datasheet/Intel/mXyzzuqw.pdf |url-status=live |archive-url=https://web.archive.org/web/20231204175055/https://pdf.datasheetcatalog.com/datasheet/Intel/mXyzzuqw.pdf |archive-date=4 December 2023 |access-date=27 June 2019 |publisher=[[Intel]] }}</ref>
|-
| 1994 || ? || 64 Mb || NOR || SLC || 1 || NEC || 400&nbsp;nm || ? || <ref name="stol"/>
|-
| 1995 || ? || 16 Mb || DINOR || SLC || 1 || Mitsubishi, Hitachi || ? || ? || |<ref name="stol"/><ref name="smithsonian-japan">{{Cite web |year=1996 |title=Japanese Company Profiles |url=http://smithsonianchips.si.edu/ice/cd/PROF96/JAPAN.PDF |url-status=dead |archive-url=https://web.archive.org/web/20230419065056/http://smithsonianchips.si.edu/ice/cd/PROF96/JAPAN.PDF |archive-date=19 April 2023 |access-date=27 June 2019 |publisher=Integrated Circuit Engineering Corporation |via=[[Smithsonian Institution]] }}</ref>
|-
|  ||  ||  || NAND || SLC || 1 || Toshiba || ? || ? || <ref name="toshiba-19950302">{{Cite press release |date=2 March 1995 |title=Toshiba to Introduce Flash Memory Cards |url=https://www.global.toshiba/ww/news/corporate/1995/03/pr0201.html |url-status=live |archive-url=https://web.archive.org/web/20231106084148/https://www.global.toshiba/ww/news/corporate/1995/03/pr0201.html |archive-date=6 November 2023 |access-date=20 June 2019 |publisher=[[Toshiba]] |id=PR0201 |location=Tokyo }}</ref>
|-
|  ||  || 32 Mb || NAND || SLC || 1 || Hitachi, Samsung, Toshiba || ? || ? || <ref name="stol"/>
|-
|  ||  || 34 Mb || Serial || SLC || 1 || SanDisk ||  ||  || 
|-
| 1996 || ? || 64 Mb || NAND || SLC || 1 || Hitachi, Mitsubishi || 400&nbsp;nm || ? || <ref name="stol"/>
|-
|  ||  ||  ||  || QLC || 1 || NEC ||  ||  || 
|-
|  ||  || 128 Mb || NAND || SLC || 1 || Samsung, Hitachi || ? ||  || 
|-
| 1997 || ? || 32 Mb || NOR || SLC || 1 || Intel, Sharp || 400&nbsp;nm || ? || <ref name="worldwideicmanuf">{{Cite web |year=1997 |title=Worldwide IC Manufacturers |url=http://smithsonianchips.si.edu/ice/cd/STATUS98/SEC02.PDF |url-status=dead |archive-url=https://web.archive.org/web/20230814162607/http://smithsonianchips.si.edu/ice/cd/STATUS98/SEC02.PDF |archive-date=14 August 2023 |access-date=10 July 2019 |publisher=Integrated Circuit Engineering Corporation |via=[[Smithsonian Institution]] }}</ref>
|-
|  ||  ||  || NAND || SLC || 1 || AMD, Fujitsu || 350&nbsp;nm ||  || 
|-
| 1999 || ? || 256 Mb || NAND || SLC || 1 || Toshiba || 250&nbsp;nm || ? || <ref name="stol"/>
|-
|  ||  ||  ||  || MLC || 1 || Hitachi || 1 ||  || 
|-
| 2000 || ? || 32 Mb || NOR || SLC || 1 || Toshiba || 250&nbsp;nm || ? || <ref name="stol"/>
|-
|  ||  || 64 Mb || NOR || QLC || 1 || STMicroelectronics || 180&nbsp;nm ||  || 
|-
|  ||  || 512 Mb || NAND || SLC || 1 || Toshiba || ? || ? || <ref name="toshiba-20020909b">{{Cite press release |date=9 September 2002 |title=Toshiba announces 0.13 micron 1Gb monolithic NAND featuring large block size for improved write/erase speed performance |url=http://www.toshiba.com/taec/news/press_releases/2002/to-230.jsp |url-status=dead |archive-url=https://web.archive.org/web/20060311224004/http://www.toshiba.com/taec/news/press_releases/2002/to-230.jsp |archive-date=11 March 2006 |access-date=11 March 2006 |publisher=[[Toshiba]] }}</ref>
|-
| 2001 || ? || 512 Mb || NAND || MLC || 1 || Hitachi || ? || ? || <ref name="stol"/>
|-
|  ||  || 1 Gibit || NAND || MLC || 1 || Samsung ||  ||  || 
|-
|  ||  ||  ||  ||  || 1 || Toshiba, SanDisk || 160&nbsp;nm || ? || <ref name="toshiba-20011112">{{Cite press release |date=12 November 2001 |title=Toshiba and SanDisk introduce a one gigabit NAND flash memory chip, doubling capacity of future flash products |url=https://www.global.toshiba/ww/news/corporate/2001/11/pr1202.html |url-status=live |archive-url=https://web.archive.org/web/20230419132953/https://www.global.toshiba/ww/news/corporate/2001/11/pr1202.html |archive-date=19 April 2023 |access-date=20 June 2019 |publisher=[[Toshiba]] |id=pr1202 |location=Las Vegas, Nv. and Tokyo, Japan }}</ref>
|-
| 2002 || ? || 512 Mb || NROM || MLC || 1 || Saifun || 170&nbsp;nm || ? || <ref name="stol"/>
|-
|  ||  || 2 GB || NAND || SLC || 1 || Samsung, Toshiba || ? || ? || <ref name="samsung2000s">{{Cite web |title=History: Continuing the legacy 2000-2009 |url=https://semiconductor.samsung.com/about-us/history/ |url-status=live |archive-url=https://web.archive.org/web/20231201063417/https://semiconductor.samsung.com/about-us/history/ |archive-date=1 December 2023 |access-date=25 June 2019 |website=[[Samsung Semiconductor]] |publisher=[[Samsung]] }}</ref><ref name="toshiba-20020909">{{Cite press release |date=9 September 2002 |title=Toshiba announces 1 gigabyte CompactFlash™ card |url=http://www.toshiba.com/taec/news/press_releases/2002/to-231.jsp |url-status=dead |archive-url=https://web.archive.org/web/20060311212118/http://www.toshiba.com/taec/news/press_releases/2002/to-231.jsp |archive-date=11 March 2006 |access-date=11 March 2006 |publisher=[[Toshiba]] }}</ref>
|-
| 2003 || ? || 128 Mb || NOR || MLC || 1 || Intel || 130&nbsp;nm || ? || <ref name="stol"/>
|-
|  ||  || 1 GB || NAND || MLC || 1 || Hitachi ||  ||  || 
|-
| 2004 || ? || 8 GB || NAND || SLC || 1 || Samsung || 60&nbsp;nm || ? || <ref name="samsung2000s"/>
|-
| 2005 || ? || 16 GB || NAND || SLC || 1 || Samsung || 50&nbsp;nm || ? || <ref name="samsung-history"/>
|-
| 2006 || ? || 32 GB || NAND || SLC || 1 || Samsung || 40&nbsp;nm ||  || 
|-
| Apr-07 || THGAM || 128 GB || Stacked NAND || SLC ||  || Toshiba || 56&nbsp;nm || 252&nbsp;mm² || <ref name="toshiba2007">{{Cite press release |date=17 April 2007 |title=Toshiba commercializes Industry's Highest Capacity Embedded NAND Flash Memory for Mobile Consumer Products |url=https://www.global.toshiba/ww/news/corporate/2007/04/pr1702.html |url-status=live |archive-url=https://web.archive.org/web/20220518042936/https://www.global.toshiba/ww/news/corporate/2007/04/pr1702.html |archive-date=18 May 2022 |access-date=23 November 2010 |publisher=[[Toshiba]] |id=PR1702 }}</ref>
|-
| Sep-07 || ? || 128 GB || Stacked NAND || SLC ||  || Hynix || ? || ? || <ref name="hynix2007">{{Cite news |date=5 September 2007 |title=Hynix Surprises NAND Chip Industry |work=[[The Korea Times]] |url=https://www.koreatimes.co.kr/www/news/biz/2007/09/123_9628.html |url-status=live |access-date=8 July 2019 |archive-url=https://web.archive.org/web/20231121145653/http://www.koreatimes.co.kr/www/news/biz/2007/09/123_9628.html |archive-date=21 November 2023 }}</ref>
|-
| 2008 || THGBM || 256 GB || Stacked NAND || SLC ||  || Toshiba || 43&nbsp;nm || 353&nbsp;mm² || <ref name="toshiba2008">{{Cite press release |date=7 August 2008 |title=Toshiba Launches the Largest Density Embedded NAND Flash Memory Devices |url=https://www.global.toshiba/ww/news/corporate/2008/08/pr0701.html |url-status=live |archive-url=https://web.archive.org/web/20231107222127/https://www.global.toshiba/ww/news/corporate/2008/08/pr0701.html |archive-date=7 November 2023 |access-date=21 June 2019 |publisher=[[Toshiba]] |id=PR0701 }}</ref>
|-
| 2009 || ? || 32 GB || NAND || TLC ||  || Toshiba || 32&nbsp;nm || 113&nbsp;mm² || <ref name="toshiba2009">{{Cite press release |date=11 February 2009 |title=Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology |url=http://www.toshiba.co.jp/about/press/2009_02/pr1102.htm |url-status=live |archive-url=https://web.archive.org/web/20230419145952/https://www.global.toshiba/ww/news/corporate/2009/02/pr1102.html |archive-date=19 April 2023 |access-date=21 June 2019 |publisher=[[Toshiba]] |id=PR1102 }}</ref>
|-
|  ||  || 64 GB || NAND || QLC ||  || Toshiba, SanDisk || 43&nbsp;nm || ? || <ref name="toshiba2009"/><ref name="toshiba-sd-2009">{{Cite news |date=13 October 2009 |title=SanDisk ships world's first memory cards with 64 gigabit X4 NAND flash |work=SlashGear |url=https://www.slashgear.com/sandisk-ships-worlds-first-memory-cards-with-64-gigabit-x4-nand-flash-1360217 |url-status=live |access-date=20 June 2019 |archive-url=https://web.archive.org/web/20230418183511/https://www.slashgear.com/sandisk-ships-worlds-first-memory-cards-with-64-gigabit-x4-nand-flash-1360217/ |archive-date=18 April 2023 }}</ref>
|-
| 2010 || ? || 64 GB || NAND || SLC ||  || Hynix || 20&nbsp;nm || ? || <ref name="hynix2010s">{{cite web |title=History: 2010s |url=https://www.skhynix.com/eng/about/history2010.jsp |website=[[SK Hynix]] |access-date=8 July 2019 |archive-date=17 May 2021 |archive-url=https://web.archive.org/web/20210517040328/https://www.skhynix.com/eng/about/history2010.jsp |url-status=dead }}</ref>
|-
|  ||  ||  ||  || TLC ||  || Samsung || 20&nbsp;nm || ? || <ref name="samsung-history"/>
|-
|  || THGBM2 || 1 Tb || Stacked NAND || QLC ||  || Toshiba || 32&nbsp;nm || 374&nbsp;mm² || <ref name="toshiba2010">{{Cite press release |date=17 June 2010 |title=Toshiba Launches Industry's Largest Embedded NAND Flash Memory Modules |url=https://www.global.toshiba/ww/news/corporate/2010/06/pr1701.html |url-status=live |archive-url=https://web.archive.org/web/20231106085036/https://www.global.toshiba/ww/news/corporate/2010/06/pr1701.html |archive-date=6 November 2023 |access-date=21 June 2019 |publisher=[[Toshiba]] |id=PR1701 }}</ref>
|-
| 2011 || KLMCG8GE4A || 512 GB || Stacked NAND || MLC ||  || Samsung || ? || 192&nbsp;mm² || <ref name="samsung-emmc441">{{Cite web |date=December 2011 |title=e.MMC 4.41 Specification compatibility Rev 1.1 |url=https://z3d9b7u8.stackpathcdn.com/pdf-down/K/L/M/KLMAG2GE4A-A001-Samsung.pdf |url-status=live |archive-url=https://web.archive.org/web/20231204170418/https://z3d9b7u8.stackpathcdn.com/pdf-down/K/L/M/KLMAG2GE4A-A001-Samsung.pdf |archive-date=4 December 2023 |access-date=15 July 2019 |publisher=[[Samsung Electronics]] }}</ref>
|-
| 2013 || ? || ? || NAND || SLC ||  || SK Hynix || 16&nbsp;nm || ? || <ref name="hynix2010s"/>
|-
|  ||  || 128 GB || V-NAND || TLC ||  || Samsung || 10&nbsp;nm || ? || 
|-
| 2015 || ? || 256 GB || V-NAND || TLC ||  || Samsung || ? || ? || <ref name="tomshardware"/>
|-
| 2017 || eUFS 2.1 || 512 GB || V-NAND || TLC || 8 of 64 || Samsung || ? || ? || <ref name="anandtech-20171205" />
|-
|  ||  || 768 GB || V-NAND || QLC ||  || Toshiba || ? || ? || <ref name="toshiba-20170628">{{Cite press release |date=28 June 2017 |title=Toshiba Develops World's First 4-bit Per Cell QLC NAND Flash Memory |url=https://www.techpowerup.com/234729/toshiba-develops-worlds-first-4-bit-per-cell-qlc-nand-flash-memory |url-status=live |archive-url=https://web.archive.org/web/20231102131301/https://www.techpowerup.com/234729/toshiba-develops-worlds-first-4-bit-per-cell-qlc-nand-flash-memory |archive-date=2 November 2023 |access-date=20 June 2019 |publisher=[[Toshiba]] |via=TechPowerUp }}</ref>
|-
|  || KLUFG8R1EM || 4 Tb || Stacked V-NAND || TLC ||  || Samsung || ? || 150&nbsp;mm² || <ref name="anandtech-20171205" />
|-
| 2018 || ? || 1 Tb || V-NAND || QLC ||  || Samsung || ? || ? || <ref name="anandtech-20180806">{{Cite news |last=Shilov |first=Anton |date=6 August 2018 |title=Samsung Starts Mass Production of QLC V-NAND-Based SSDs |work=[[AnandTech]] |url=https://www.anandtech.com/show/13170/samsung-starts-mass-production-of-qlc-vnandbased-ssds |url-status=live |access-date=23 June 2019 |archive-url=https://web.archive.org/web/20231102133017/https://www.anandtech.com/show/13170/samsung-starts-mass-production-of-qlc-vnandbased-ssds |archive-date=2 November 2023 }}</ref>
|-
|  ||  || 1.33 Tb || V-NAND || QLC ||  || Toshiba || ? || 158&nbsp;mm² || <ref name="engadget-20180720">{{Cite news |last=Dent |first=Steve |date=20 July 2018 |title=Toshiba's flash chips could boost SSD capacity by 500 percent |work=[[Engadget]] |url=https://www.engadget.com/2018/07/20/toshiba-flash-166-gb-per-chip/ |url-status=live |access-date=23 June 2019 |archive-url=https://web.archive.org/web/20231106203450/https://www.engadget.com/2018-07-20-toshiba-flash-166-gb-per-chip.html |archive-date=6 November 2023 }}</ref><ref name="eetimes-20190220">{{Cite news |last=McGrath |first=Dylan |date=20 February 2019 |title=Toshiba Claims Highest-Capacity NAND |work=[[EE Times]] |location=San Francisco |url=https://www.eetimes.com/document.asp?doc_id=1334344 |url-status=live |access-date=23 June 2019 |archive-url=https://web.archive.org/web/20230423012213/https://www.eetimes.com/toshiba-claims-highest-capacity-nand/ |archive-date=23 April 2023 }}</ref>
|-
| 2019 || ? || 512 GB || V-NAND || QLC ||  || Samsung || ? || ? || <ref name="electronicsweekly-samsung">{{Cite news |last=Manners |first=David |date=30 January 2019 |title=Samsung makes 1TB flash eUFS module |work=[[Electronics Weekly]] |url=https://www.electronicsweekly.com/news/business/samsung-makes-1tb-flash-module-2019-01/ |url-status=live |access-date=23 June 2019 |archive-url=https://web.archive.org/web/20230210114056/https://www.electronicsweekly.com/news/business/samsung-makes-1tb-flash-module-2019-01/ |archive-date=10 February 2023 }}</ref><ref name="anandtech-samsung-2018">{{Cite news |last=Tallis |first=Billy |date=17 October 2018 |title=Samsung Shares SSD Roadmap for QLC NAND And 96-layer 3D NAND |work=[[AnandTech]] |url=https://www.anandtech.com/show/13497/samsung-shares-ssd-roadmap-for-qlc-nand-and-96layer-3d-nand |url-status=live |access-date=27 June 2019 |archive-url=https://web.archive.org/web/20231106103853/https://www.anandtech.com/show/13497/samsung-shares-ssd-roadmap-for-qlc-nand-and-96layer-3d-nand |archive-date=6 November 2023 }}</ref>
|-
|  ||  || 1 Tb || V-NAND || TLC ||  || SK Hynix || ? || ? || <ref name="anandtech-20190626">{{Cite news |last=Shilov |first=Anton |date=26 June 2019 |title=SK Hynix Starts Production of 128-Layer 4D NAND, 176-Layer Being Developed |work=[[AnandTech]] |url=https://www.anandtech.com/show/14589/sk-hynix-128-layer-4d-nand |url-status=live |access-date=8 July 2019 |archive-url=https://web.archive.org/web/20230622221123/https://www.anandtech.com/show/14589/sk-hynix-128-layer-4d-nand |archive-date=22 June 2023 }}</ref>
|-
|  || eUFS 2.1 || 1 Tb || Stacked V-NAND<ref name="zdnet-20190129">{{Cite news |last=Mu-Hyun |first=Cho |title=Samsung produces 1TB eUFS memory for smartphones |work=[[ZDNet]] |url=https://www.zdnet.com/article/samsung-produces-1tb-eufs-memory-for-smartphones/ |url-status=live |archive-url=https://web.archive.org/web/20231102133634/https://www.zdnet.com/article/samsung-produces-1tb-eufs-memory-for-smartphones/ |archive-date=2 November 2023 }}</ref> || QLC || 16 of 64 || Samsung || ? || 150&nbsp;mm² || <ref name="electronicsweekly-samsung" /><ref name="anandtech-samsung-2018" /><ref name="samsung-20190130">{{Cite press release |date=30 January 2019 |title=Samsung Breaks Terabyte Threshold for Smartphone Storage with Industry's First 1TB Embedded Universal Flash Storage |url=https://news.samsung.com/global/samsung-breaks-terabyte-threshold-for-smartphone-storage-with-industrys-first-1tb-embedded-universal-flash-storage |url-status=live |archive-url=https://web.archive.org/web/20231130040907/https://news.samsung.com/global/samsung-breaks-terabyte-threshold-for-smartphone-storage-with-industrys-first-1tb-embedded-universal-flash-storage |archive-date=30 November 2023 |access-date=13 July 2019 |publisher=[[Samsung]] }}</ref>
|-
| 2023 || eUFS 4.0 || 8 Tb || 3D NAND || QLC || 232 || Micron || ? || ? || <ref name="ufs4-infographic">{{Cite web |year=2023 |title=UFS 4.0 Infographic |url=https://media-www.micron.com/-/media/client/global/images/in_line-images/products/managed-nand/ufs-4_0/ufs-4-infographic.pdf |url-status=live |archive-url=https://web.archive.org/web/20231029022836/https://media-www.micron.com/-/media/client/global/images/in_line-images/products/managed-nand/ufs-4_0/ufs-4-infographic.pdf |archive-date=29 October 2023 |publisher=[[Micron]] }}</ref>
|}