Editing Cadmium arsenide (section)

=== Conducting ===

Cadmium arsenide is a II-V [[semiconductor]] showing degenerate [[n-type semiconductor]] intrinsic conductivity with a large mobility, low effective mass and highly non parabolic conduction band, or a [[Narrow-gap semiconductor]]. It displays an inverted band structure, and the optical energy gap, e<sub>g</sub>, is less than 0. When deposited by thermal [[evaporation (deposition)]], cadmium arsenide displayed the Schottky ([[thermionic emission]]) and [[Poole–Frenkel effect]] at high electric fields.<ref>{{Cite journal | doi = 10.1016/j.apsusc.2005.12.151| title = Van der Pauw resistivity measurements on evaporated thin films of cadmium arsenide, Cd<sub>3</sub>As<sub>2</sub>| journal = Applied Surface Science| volume = 252| issue = 15| pages = 5508–5511| year = 2006| last1 = Din | first1 = M.| last2 = Gould | first2 = R. D. | bibcode = 2006ApSS..252.5508D}}</ref>