Editing Epitaxy (section)

===Liquid-phase===
Liquid-phase epitaxy (LPE) is a method to grow semiconductor crystal layers from the melt on solid substrates. This happens at temperatures well below the melting point of the deposited semiconductor. The semiconductor is dissolved in the melt of another material. At conditions that are close to the equilibrium between dissolution and deposition, the deposition of the semiconductor crystal on the substrate is relatively fast and uniform. The most used substrate is indium phosphide (InP). Other substrates like glass or ceramic can be applied for special applications. To facilitate nucleation, and to avoid tension in the grown layer the thermal expansion coefficient of substrate and grown layer should be similar.

Centrifugal liquid-phase epitaxy is used commercially to make thin layers of [[silicon]], [[germanium]], and [[gallium arsenide]].<ref name="Capper2007">{{cite book|last1=Capper|first1=Peter|last2=Mauk|first2=Michael|title=Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials|date=2007|publisher=John Wiley & Sons|isbn=9780470319499|pages=134–135|url={{google books |plainurl=y |id=e5mM5INQK9IC|page=135}}|access-date=3 October 2017|language=en}}</ref><ref name="Farrow2013">{{cite book|author1-link=Robin F. C. Farrow|last1=Farrow|first1=R. F. C.|last2=Parkin|first2=S. S. P.|last3=Dobson|first3=P. J.|last4=Neave|first4=J. H.|last5=Arrott|first5=A. S.|title=Thin Film Growth Techniques for Low-Dimensional Structures|date=2013|publisher=Springer Science & Business Media|isbn=9781468491456|pages=174–176|url={{google books |plainurl=y |id=WM7kBwAAQBAJ|page=192}}|access-date=3 October 2017|language=en}}</ref> Centrifugally formed film growth is a process used to form thin layers of materials by using a [[centrifuge]]. The process has been used to create silicon for thin-film solar cells<ref name="Christensen2015">{{cite web|last1=Christensen|first1=Arnfinn|title=Speedy production of silicon for solar cells|url=http://sciencenordic.com/alternative-energy-environmental-technology-forskningno/speedy-production-of-silicon-for-solar-cells/1419392|website=sciencenordic.com|date=29 July 2015 |publisher=ScienceNordic|access-date=3 October 2017|language=en}}</ref><ref name="Luque2012">{{cite book|last1=Luque|first1=A.|last2=Sala|first2=G.|last3=Palz|first3=Willeke|last4=Santos|first4=G. dos|last5=Helm|first5=P.|title=Tenth E.C. Photovoltaic Solar Energy Conference: Proceedings of the International Conference, held at Lisbon, Portugal, 8–12 April 1991|date=2012|publisher=Springer|isbn=9789401136228|page=694|url={{google books |plainurl=y |id=CKfnCAAAQBAJ|page=694}}|access-date=3 October 2017|language=en}}</ref> and far-infrared photodetectors.<ref name="Katterloher2002">{{cite journal|last1=Katterloher|first1=Reinhard O.|last2=Jakob|first2=Gerd|last3=Konuma|first3=Mitsuharu|last4=Krabbe|first4=Alfred|last5=Haegel|first5=Nancy M.|author5-link=Nancy Haegel|last6=Samperi|first6=S. A.|last7=Beeman|first7=Jeffrey W.|last8=Haller|first8=Eugene E.|editor-first1=Marija |editor-first2=Bjorn F. |editor-last1=Strojnik |editor-last2=Andresen |title=Liquid phase epitaxy centrifuge for growth of ultrapure gallium arsenide for far-infrared photoconductors|journal=Infrared Spaceborne Remote Sensing IX|date=8 February 2002|volume=4486|pages=200–209|doi=10.1117/12.455132|bibcode=2002SPIE.4486..200K|s2cid=137003113}}</ref> Temperature and centrifuge spin rate are used to control layer growth.<ref name="Farrow2013" /> Centrifugal LPE has the capability to create dopant concentration gradients while the solution is held at constant temperature.<ref name="Pauleau2012">{{cite book|last1=Pauleau|first1=Y.|title=Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies|date=2012|publisher=Springer Science & Business Media|isbn=9789401003537|page=45|url={{google books |plainurl=y |id=fsXoCAAAQBAJ|page=67}}|access-date=3 October 2017|language=en}}</ref>