Editing Non-volatile memory (section)

=== Ferroelectric RAM (F-RAM) ===
{{Main|Ferroelectric RAM}}

'''Ferroelectric RAM''' ('''FeRAM''', '''F-RAM''' or '''FRAM''') is a form of [[random-access memory]] similar in construction to [[DRAM]], both use a capacitor and transistor but instead of using a simple [[dielectric]] layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate {{chem2|[Pb(Zr,Ti)O3]}}, commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Due to the PZT crystal maintaining polarity, F-RAM retains its data memory when power is shut off or interrupted.

Due to this crystal structure and how it is influenced, F-RAM offers distinct properties from other nonvolatile memory options, including extremely high, although not infinite, endurance (exceeding 10<sup>16</sup> read/write cycles for 3.3&nbsp;V devices), ultra-low power consumption (since F-RAM does not require a charge pump like other non-volatile memories), single-cycle write speeds, and gamma radiation tolerance.<ref>{{citation |url=http://www.ramtron.com/about-us/what-is-f-ram.aspx |title=F-RAM Memory Technology |publisher=Ramtron.com |access-date=30 January 2012 |url-status=live |archive-url=https://web.archive.org/web/20120127063617/http://ramtron.com/about-us/what-is-f-ram.aspx |archive-date=27 January 2012}}</ref>