Editing Non-volatile random-access memory (section)

===Magnetoresistive RAM===

Another approach to see major development effort is [[magnetoresistive random-access memory]], or MRAM, which uses magnetic elements and in general operates in a fashion similar to core, at least for the first-generation technology. Only one MRAM chip has entered production to date: [[Freescale Semiconductor|Everspin Technologies]]' 4 Mbit part, which is a first-generation MRAM that utilizes cross-point field induced writing.<ref>{{cite web|url=http://www.everspin.com/technology.html|title=Technology|website=Everspin|archive-url=https://web.archive.org/web/20090610070935/http://www.everspin.com/technology.html|archive-date=June 10, 2009}}</ref> Two second-generation techniques are currently in development: [[Thermal Assisted Switching]] (TAS),<ref>{{cite web|title=The Emergence of Practical MRAM |first=Barry |last=Hoberman |website=Crocus Technology |url=http://www.crocus-technology.com/pdf/BH%20GSA%20Article.pdf |access-date=2009-07-20 |url-status=dead |archive-url=https://web.archive.org/web/20110427022729/http://www.crocus-technology.com/pdf/BH%20GSA%20Article.pdf |archive-date=2011-04-27}}</ref> which is being developed by [[Crocus Technology]], and [[spin-transfer torque]] (STT) on which Crocus, [[Hynix]], [[IBM]], and several other companies are working.<ref>{{cite web|url=https://www.eetimes.com/tower-invests-in-crocus-tips-mram-foundry-deal/ |title=Tower invests in Crocus, tips MRAM foundry deal |first=Mark |last=LaPedus |date=2009-06-18 |website=[[EE Times]] |access-date=2020-01-09}}</ref> STT-MRAM appears to allow for much higher densities than those of the first generation, but is lagging behind flash for the same reasons as FeRAM &ndash; enormous competitive pressures in the flash market.