Editing Radiation hardening (section)

====Lattice displacement====
Lattice displacement is caused by [[neutron]]s, protons, alpha particles, heavy ions, and very high energy [[gamma photon]]s. They change the arrangement of the atoms in the [[crystal lattice]], creating lasting damage, and increasing the number of [[Carrier generation and recombination|recombination center]]s, depleting the [[minority carrier]]s and worsening the analog properties of the affected semiconductor [[p-n junction|junctions]]. Counterintuitively, higher doses over a short time cause partial [[Annealing (metallurgy)|annealing]] ("healing") of the damaged lattice, leading to a lower degree of damage than with the same doses delivered in low intensity over a long time (LDR or Low Dose Rate). This type of problem is particularly significant in [[bipolar transistor]]s, which are dependent on minority carriers in their base regions; increased losses caused by [[recombination (physics)|recombination]] cause loss of the transistor [[gain (electronics)#Electronics|gain]] (see ''[[#Resultant effects|neutron effects]]''). Components certified as ELDRS (Enhanced Low Dose Rate Sensitive)-free do not show damage with fluxes below 0.01 rad(Si)/s = 36 rad(Si)/h.