Editing Silicon on insulator (section)

==Use in high-performance radio frequency (RF) applications==
In 1990, [[Peregrine Semiconductor]] began development of an SOI process technology utilizing a standard 0.5&nbsp;μm CMOS node and an enhanced sapphire substrate. Its patented [[silicon on sapphire]] (SOS) process is widely used in high-performance RF applications. The intrinsic benefits of the insulating sapphire substrate allow for high isolation, high linearity and electro-static discharge (ESD) tolerance. Multiple other companies have also applied SOI technology to successful RF applications in smartphones and cellular radios.<ref>{{cite news |title=Handset RFFEs: ''MMPAs, Envelope Tracking, Antenna Tuning, FEMs, and MIMO'' |first=Joe |last=Madden |url=http://mobile-experts.net/manuals/mexp-rffe-12%20toc.pdf |archive-url=https://web.archive.org/web/20160304044306/http://mobile-experts.net/manuals/mexp-rffe-12%20toc.pdf |archive-date=4 March 2016 |publisher= Mobile Experts |access-date=2 May 2012 }}</ref>{{additional citation needed|date=June 2018}}